| Kinetics controlled aging effect of ferroelectricity in Al-doped and Ga-doped BaTiO3 | |
| Guo, Y. Y.; Qin, M. H.; Wei, T.; Wang, K. F.; Liu, J. -M.1 | |
| Corresponding Author | Liu, J. -M.(liujm@nju.edu.cn) |
| 2010-09-13 | |
| Source Publication | APPLIED PHYSICS LETTERS
 |
| ISSN | 0003-6951 |
| Volume | 97Issue:11Pages:3 |
| Abstract | Our experiments on ferroelectric aging of Al3+- and Ga3+-doped BaTiO3 ceramics reveal the crucial role of migration kinetics of point defects (oxygen vacancies) besides the thermodynamic driving force based on the symmetry conforming short-range ordering scenario. The doping with Ga3+ or tiny Al3+ ions shows the clear aging effect, while the high-level Al3+-doping suppresses the aging effect. The suppression is mainly attributed to the kinetically limited migration of oxygen vacancies due to the lattice shrinkage, while the other mechanisms may also make sense. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3490700] |
| Funding Organization | National Natural Science Foundation of China ; National Key Projects for Basic Researches of China |
| DOI | 10.1063/1.3490700 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | National Natural Science Foundation of China[50832002] ; National Natural Science Foundation of China[10874085] ; National Key Projects for Basic Researches of China[2009CB623303] ; National Key Projects for Basic Researches of China[2011CB922101] |
| WOS Research Area | Physics |
| WOS Subject | Physics, Applied |
| WOS ID | WOS:000282032900059 |
| Publisher | AMER INST PHYSICS |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/100163 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Liu, J. -M. |
| Affiliation | 1.Nanjing Univ, Solid State Microstruct Lab, Nanjing 210093, Peoples R China 2.Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110016, Peoples R China |
| Recommended Citation GB/T 7714 | Guo, Y. Y.,Qin, M. H.,Wei, T.,et al. Kinetics controlled aging effect of ferroelectricity in Al-doped and Ga-doped BaTiO3[J]. APPLIED PHYSICS LETTERS,2010,97(11):3. |
| APA | Guo, Y. Y.,Qin, M. H.,Wei, T.,Wang, K. F.,&Liu, J. -M..(2010).Kinetics controlled aging effect of ferroelectricity in Al-doped and Ga-doped BaTiO3.APPLIED PHYSICS LETTERS,97(11),3. |
| MLA | Guo, Y. Y.,et al."Kinetics controlled aging effect of ferroelectricity in Al-doped and Ga-doped BaTiO3".APPLIED PHYSICS LETTERS 97.11(2010):3. |
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