Substrate temperature dependence of ZnTe epilayers grown on GaAs(001) by molecular beam epitaxy

doi:10.1016/j.jcrysgro.2010.01.032

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	Substrate temperature dependence of ZnTe epilayers grown on GaAs(001) by molecular beam epitaxy
	Zhao, Jie 1,2; Zeng, Yiping 1,2; Liu, Chao 1,2; Li, Yanbo 1,2
通讯作者	Zhao, Jie(jiezhao_sub@163.com)
	2010-04-15
发表期刊	JOURNAL OF CRYSTAL GROWTH
ISSN	0022-0248
卷号	312 期号:9 页码:1491-1495
摘要	ZnTe thin films have been grown on GaAs(0 0 1) substrates at different temperatures with constant Zn and Te beam equivalent pressures (BEPs) by molecular beam epitaxy (MBE). In situ reflection high-energy electron diffraction (RHEED) observation indicates that two-dimensional (2D) growth mode can be established after around one-minute three-dimensional (3D) nucleation by increasing the substrate temperature to 340 degrees C. We found that Zn desorption from the ZnTe surface is much greater than that of Te at higher temperatures, and estimated the Zn sticking coefficient by the evolution of growth rate. The Zn sticking coefficient decreases from 0.93 to 0.58 as the temperature is elevated from 320 to 400 degrees C. The ZnTe epilayer grown at 360 degrees C displays the narrowest full-width at half-maximum (FWHM) of 660 arcsec from (0 0 4) reflection in double-crystal X-ray rocking curve (DCXRC) measurements. The surface morphology of ZnTe epilayers is strongly dependent on the substrate temperature, and the root-mean-square (RMS) roughness diminishes drastically with the increase in temperature. (C) 2010 Elsevier B.V. All rights reserved.
关键词	Reflection high-energy electron diffraction Atomic force microscopy Molecular beam epitaxy Zinc compounds Semiconducting II-VI materials
资助者	Knowledge Innovation Program Foundation of Institute of semiconductors, CAS ; National Natural Science Foundation of China
DOI	10.1016/j.jcrysgro.2010.01.032
收录类别	SCI
语种	英语
资助项目	Knowledge Innovation Program Foundation of Institute of semiconductors, CAS[09S1010001] ; National Natural Science Foundation of China[0913120000]
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000277530200004
出版者	ELSEVIER SCIENCE BV
引用统计	被引频次：9[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/100510
专题	中国科学院金属研究所
通讯作者	Zhao, Jie
作者单位	1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Zhao, Jie,Zeng, Yiping,Liu, Chao,et al. Substrate temperature dependence of ZnTe epilayers grown on GaAs(001) by molecular beam epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,2010,312(9):1491-1495.
APA	Zhao, Jie,Zeng, Yiping,Liu, Chao,&Li, Yanbo.(2010).Substrate temperature dependence of ZnTe epilayers grown on GaAs(001) by molecular beam epitaxy.JOURNAL OF CRYSTAL GROWTH,312(9),1491-1495.
MLA	Zhao, Jie,et al."Substrate temperature dependence of ZnTe epilayers grown on GaAs(001) by molecular beam epitaxy".JOURNAL OF CRYSTAL GROWTH 312.9(2010):1491-1495.