| Variation of Optical Quenching of Photoconductivity with Resistivity in Unintentional Doped GaN | |
| Hou Qi-Feng1; Wang Xiao-Liang1,2; Xiao Hong-Ling1,2; Wang Cui-Mei1,2; Yang Cui-Bai1,2; Li Jin-Min1 | |
| Corresponding Author | Hou Qi-Feng(qfhou@semi.ac.cn) |
| 2010-05-01 | |
| Source Publication | CHINESE PHYSICS LETTERS
 |
| ISSN | 0256-307X |
| Volume | 27Issue:5Pages:4 |
| Abstract | The optical quenching of photoconductivity under dual illumination in GaN samples with different resistivity is investigated to reveal the variation of deep levels. The samples are grown by metal organic chemical vapour deposition without intentional doping. Quenching bands centered at 1.35 eV, 1.55 eV, 1.98 eV, and 2.60 eV are observed. It is found that the 1.98 eV quenching band is dominated in all the samples and the 2.60 eV band is observed only in the high-resistivity samples. The possible defect levels responsible for the quenching bands and the origin of different quenching behaviour at 2.60 eV are discussed. It is suggested that the defect level responsible for quenching at 2.60 eV plays an important role for the enhancement of resistivity. |
| Funding Organization | Chinese Academy of Sciences ; National Natural Sciences Foundation of China ; National Basic Research Program of China |
| DOI | 10.1088/0256-307X/27/5/057104 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | Chinese Academy of Sciences[YYYJ-0701-02] ; Chinese Academy of Sciences[IS-CAS2008T01] ; Chinese Academy of Sciences[ISCAS2009L01] ; Chinese Academy of Sciences[ISCAS2009L02] ; National Natural Sciences Foundation of China[60890193] ; National Natural Sciences Foundation of China[60906006] ; National Basic Research Program of China[2006CB604905] |
| WOS Research Area | Physics |
| WOS Subject | Physics, Multidisciplinary |
| WOS ID | WOS:000277344700058 |
| Publisher | IOP PUBLISHING LTD |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/100634 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Hou Qi-Feng |
| Affiliation | 1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| Recommended Citation GB/T 7714 | Hou Qi-Feng,Wang Xiao-Liang,Xiao Hong-Ling,et al. Variation of Optical Quenching of Photoconductivity with Resistivity in Unintentional Doped GaN[J]. CHINESE PHYSICS LETTERS,2010,27(5):4. |
| APA | Hou Qi-Feng,Wang Xiao-Liang,Xiao Hong-Ling,Wang Cui-Mei,Yang Cui-Bai,&Li Jin-Min.(2010).Variation of Optical Quenching of Photoconductivity with Resistivity in Unintentional Doped GaN.CHINESE PHYSICS LETTERS,27(5),4. |
| MLA | Hou Qi-Feng,et al."Variation of Optical Quenching of Photoconductivity with Resistivity in Unintentional Doped GaN".CHINESE PHYSICS LETTERS 27.5(2010):4. |
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