| Magnetic anisotropy and metal-insulator transition in SrRuO3 thin films at different growth temperatures | |
| Wang, X. W.1; Wang, X.; Zhang, Y. Q.; Zhu, Y. L.; Wang, Z. J.; Zhang, Z. D. | |
| Corresponding Author | Wang, X. W.() |
| 2010-06-01 | |
| Source Publication | JOURNAL OF APPLIED PHYSICS
 |
| ISSN | 0021-8979 |
| Volume | 107Issue:11Pages:5 |
| Abstract | Magnetic and transport properties of SrRuO3 film grown on SrTiO3 at different substrate temperatures have been investigated. Metallic behavior over the temperature range from 5 to 300 K is observed in the film grown at 750 degrees C. With a decrease in the growth temperature, a metal-insulator transition occurs for films grown at 700 and 650 degrees C, with transition temperatures of 15 K and 250 K, respectively, and a complete insulator behavior shows up in the film grown at 600 degrees C. Correspondingly, out-of-plane (OOP) magnetic anisotropy is gradually weakened, leading to complete magnetic isotropy in the film grown at 600 degrees C. The OOP lattice constant increases from 0.395 nm, for the film grown at 750 degrees C, up to 0.403 nm for the film grown at 600 degrees C. The correlation between the magnetic properties, transport properties, and the lattice constants indicates that the magnetic anisotropy and the metal-insulator transition (or insulator behavior) are caused mainly by strain in the SRO films, with correspondingly larger strain in films grown at lower temperatures. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3431459] |
| Keyword | internal stresses lattice constants magnetic anisotropy magnetic thin films metal-insulator transition pulsed laser deposition strontium compounds |
| Funding Organization | National Natural Science Foundation of China ; Chinese Academy of Sciences ; National Basic Research Program of China ; Ministry of Science and Technology of China |
| DOI | 10.1063/1.3431459 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | National Natural Science Foundation of China[50802098] ; Chinese Academy of Sciences ; National Basic Research Program of China[2010CB934603] ; Ministry of Science and Technology of China |
| WOS Research Area | Physics |
| WOS Subject | Physics, Applied |
| WOS ID | WOS:000278907100106 |
| Publisher | AMER INST PHYSICS |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/100737 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Wang, X. W. |
| Affiliation | 1.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China 2.Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110016, Peoples R China |
| Recommended Citation GB/T 7714 | Wang, X. W.,Wang, X.,Zhang, Y. Q.,et al. Magnetic anisotropy and metal-insulator transition in SrRuO3 thin films at different growth temperatures[J]. JOURNAL OF APPLIED PHYSICS,2010,107(11):5. |
| APA | Wang, X. W.,Wang, X.,Zhang, Y. Q.,Zhu, Y. L.,Wang, Z. J.,&Zhang, Z. D..(2010).Magnetic anisotropy and metal-insulator transition in SrRuO3 thin films at different growth temperatures.JOURNAL OF APPLIED PHYSICS,107(11),5. |
| MLA | Wang, X. W.,et al."Magnetic anisotropy and metal-insulator transition in SrRuO3 thin films at different growth temperatures".JOURNAL OF APPLIED PHYSICS 107.11(2010):5. |
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