| Multi-wafer 3C-SiC heteroepitaxial growth on Si(100) substrates | |
| Sun Guo-Sheng1,2; Liu Xing-Fang1,2; Wang Lei2; Zhao Wan-Shun2; Yang Ting2; Wu Hai-Lei2; Yan Guo-Guo2; Zhao Yong-Mei3; Ning Jin3; Zeng Yi-Ping1,2; Li Jin-Min1,2 | |
| Corresponding Author | Sun Guo-Sheng(gshsun@red.semi.ac.cn) |
| 2010-08-01 | |
| Source Publication | CHINESE PHYSICS B
 |
| ISSN | 1674-1056 |
| Volume | 19Issue:8Pages:5 |
| Abstract | Epitaxial growth of semiconductor films in multiple-wafer mode is under vigorous development in order to improve yield output to meet the industry increasing demands. Here we report on results of the heteroepitaxial growth of multi-wafer 3C-SiC films on Si(100) substrates by employing a home-made horizontal hot wall low pressure chemical vapour deposition (HWLPCVD) system which was designed to be have a high-throughput, multi-wafer (3x2-inch) capacity. 3C-SiC film properties of the intra-wafer and the wafer-to-wafer including crystalline morphologies, structures and electronics are characterized systematically. The undoped and the moderate NH(3) doped n-type 3C-SiC films with specular surface are grown in the HWLPCVD, thereafter uniformities of intra-wafer thickness and sheet resistance of the 3C-SiC films are obtained to be 6%similar to 7% and 6.7%similar to 8%, respectively, and within a run, the deviations of wafer-to-wafer thickness and sheet resistance are less than 1% and 0.8%, respectively. |
| Keyword | 3C-SiC heteroepitaxial multi-wafer uniformity |
| Funding Organization | National Natural Science Foundation of China ; Chinese Academy of Sciences |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | National Natural Science Foundation of China[60876003] ; National Natural Science Foundation of China[60606003] ; Chinese Academy of Sciences[yz200702] |
| WOS Research Area | Physics |
| WOS Subject | Physics, Multidisciplinary |
| WOS ID | WOS:000280741800091 |
| Publisher | IOP PUBLISHING LTD |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/101284 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Sun Guo-Sheng |
| Affiliation | 1.Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, Beijing 100083, Peoples R China 3.Chinese Acad Sci, State Key Lab Transducer Technol, Beijing 100083, Peoples R China |
| Recommended Citation GB/T 7714 | Sun Guo-Sheng,Liu Xing-Fang,Wang Lei,et al. Multi-wafer 3C-SiC heteroepitaxial growth on Si(100) substrates[J]. CHINESE PHYSICS B,2010,19(8):5. |
| APA | Sun Guo-Sheng.,Liu Xing-Fang.,Wang Lei.,Zhao Wan-Shun.,Yang Ting.,...&Li Jin-Min.(2010).Multi-wafer 3C-SiC heteroepitaxial growth on Si(100) substrates.CHINESE PHYSICS B,19(8),5. |
| MLA | Sun Guo-Sheng,et al."Multi-wafer 3C-SiC heteroepitaxial growth on Si(100) substrates".CHINESE PHYSICS B 19.8(2010):5. |
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