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Magnetic and transport properties of Mn3+x Ga1-x N compounds
Feng, W. J.1,2,3; Li, D.2,3; Deng, Y. F.1; Zhang, Q.2,3; Zhang, H. H.1; Zhang, Z. D.2,3
通讯作者Feng, W. J.(wjfeng@yahoo.com.cn)
2010-05-01
发表期刊JOURNAL OF MATERIALS SCIENCE
ISSN0022-2461
卷号45期号:10页码:2770-2774
摘要Mn3+x Ga1-x N compounds with x = 0.0 and 0.1 were prepared by re-sintering Mn2N0.86, Ga bulk and Mn powders. These compounds are deduced to be the N-deficiency ones. In Mn3GaN, a step-like magnetic transition, from frustrated antiferromagnetism to paramagnetism with increasing temperature, occurs at 370 K, while the same magnetic transition of Mn3.1Ga0.9N is far above 380 K. The enhanced magnetization of Mn3GaN at low temperatures is ascribed to the fast lowering of antiferromagnetism. The electrical resistivity of Mn3GaN exhibits a typically metallic conducting behavior with a positive magnetoresistance of 4-7%.
资助者National Natural Science Foundation of China ; Liaoning Province ; Open Fund of Laboratory Centre of Shenyang Normal University
DOI10.1007/s10853-010-4265-2
收录类别SCI
语种英语
资助项目National Natural Science Foundation of China[50332020] ; Liaoning Province[20072056] ; Open Fund of Laboratory Centre of Shenyang Normal University[SYZX01]
WOS研究方向Materials Science
WOS类目Materials Science, Multidisciplinary
WOS记录号WOS:000275457100030
出版者SPRINGER
引用统计
被引频次:12[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/102233
专题中国科学院金属研究所
通讯作者Feng, W. J.
作者单位1.Shenyang Normal Univ, Coll Phys Sci & Technol, Shenyang 110034, Peoples R China
2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
3.Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110016, Peoples R China
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Feng, W. J.,Li, D.,Deng, Y. F.,et al. Magnetic and transport properties of Mn3+x Ga1-x N compounds[J]. JOURNAL OF MATERIALS SCIENCE,2010,45(10):2770-2774.
APA Feng, W. J.,Li, D.,Deng, Y. F.,Zhang, Q.,Zhang, H. H.,&Zhang, Z. D..(2010).Magnetic and transport properties of Mn3+x Ga1-x N compounds.JOURNAL OF MATERIALS SCIENCE,45(10),2770-2774.
MLA Feng, W. J.,et al."Magnetic and transport properties of Mn3+x Ga1-x N compounds".JOURNAL OF MATERIALS SCIENCE 45.10(2010):2770-2774.
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