Optimization of VI/II pressure ratio in ZnTe growth on GaAs(001) by molecular beam epitaxy

doi:10.1016/j.apsusc.2010.04.105

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	Optimization of VI/II pressure ratio in ZnTe growth on GaAs(001) by molecular beam epitaxy
	Zhao, Jie 1,2; Zeng, Yiping 1,2; Liu, Chao 1,2; Cui, Lijie 1,2; Li, Yanbo 1,2
通讯作者	Zhao, Jie(jiezhao@semi.ac.cn)
	2010-09-01
发表期刊	APPLIED SURFACE SCIENCE
ISSN	0169-4332
卷号	256 期号:22 页码:6881-6886
摘要	ZnTe epilayers were grown on GaAs(0 0 1) substrates by molecular beam epitaxy (MBE) at different VI/II beam equivalent pressure (BEP) ratios (R(VI/II)) in a wide range of 0.96-11 with constant Zn flux. Based on in situ reflection high-energy electron diffraction (RHEED) observation, two-dimensional (2D) growth mode can be formed by increasing the R(VI/II) to 2.8. The Te/Zn pressure ratios lower than 4.0 correspond to Zn-rich growth state, while the ratios over 6.4 correspond to Te-rich one. The Zn sticking coefficient at various VI/II ratios are derived by the growth rate measurement. The ZnTe epilayer grown at a R(VI/II) of 6.4 displays the narrowest full-width at half-maximum (FWHM) of double-crystal X-ray rocking curve (DCXRC) for (0 0 4) reflection. Atomic force microscopy (AFM) characterization shows that the grain size enlarges drastically with the R(VI/II). The surface root-mean-square (RMS) roughness decreases firstly, attains a minimum of 1.14 nm at a R(VI/II) of 4.0 and then increases at higher ratios. It is suggested that the most suitable R(VI/II) be controlled between 4.0 and 6.4 in order to grow high-quality ZnTe epitaxial thin films. (C) 2010 Elsevier B. V. All rights reserved.
关键词	ZnTe Molecular beam epitaxy Reflection high-energy electron diffraction X-ray diffraction Atomic force microscopy
资助者	Knowledge Innovation Program Foundation of Institute of semiconductors, Chinese Academy of Sciences ; National Natural Science Foundation of China
DOI	10.1016/j.apsusc.2010.04.105
收录类别	SCI
语种	英语
资助项目	Knowledge Innovation Program Foundation of Institute of semiconductors, Chinese Academy of Sciences[09S1010001] ; National Natural Science Foundation of China[0913120000]
WOS研究方向	Chemistry ; Materials Science ; Physics
WOS类目	Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:000278908900066
出版者	ELSEVIER SCIENCE BV
引用统计	被引频次：11[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/102702
专题	中国科学院金属研究所
通讯作者	Zhao, Jie
作者单位	1.Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Zhao, Jie,Zeng, Yiping,Liu, Chao,et al. Optimization of VI/II pressure ratio in ZnTe growth on GaAs(001) by molecular beam epitaxy[J]. APPLIED SURFACE SCIENCE,2010,256(22):6881-6886.
APA	Zhao, Jie,Zeng, Yiping,Liu, Chao,Cui, Lijie,&Li, Yanbo.(2010).Optimization of VI/II pressure ratio in ZnTe growth on GaAs(001) by molecular beam epitaxy.APPLIED SURFACE SCIENCE,256(22),6881-6886.
MLA	Zhao, Jie,et al."Optimization of VI/II pressure ratio in ZnTe growth on GaAs(001) by molecular beam epitaxy".APPLIED SURFACE SCIENCE 256.22(2010):6881-6886.