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Dislocations in charge-ordered Pr0.5Ca0.5MnO3 epitaxial thin films prepared by a two-step growth technique
Zhu, Y. L.; Wang, X.; Zhuo, M. J.; Zhang, Y. Q.; Ma, X. L.
Corresponding AuthorZhu, Y. L.(ylzhu@imr.ac.cn)
2010
Source PublicationPHILOSOPHICAL MAGAZINE LETTERS
ISSN0950-0839
Volume90Issue:5Pages:323-336
AbstractCharge-ordered Pr0.5Ca0.5MnO3 (PCMO) thin films epitaxially grown on SrTiO3 (100) substrates were prepared by a two-step growth technique which resulted in a 10 nm thick first layer and a 70 nm thick main layer. The dislocations in the as-received films were investigated using conventional and high-resolution transmission electron microscopy. Pure-edge misfit dislocations with Burgers vectors a < 011 > and line directions < 100 > were found to be the major interfacial defects responsible for the full misfit relief in the PCMO films. These dislocations constitute a square grid of dislocation lines parallel to the PCMO/SrTiO3 interface. In contrast, two types of dislocations were identified within the first layer. One is of edge type with Burgers vectors a < 110 > and line directions < 001 >; the other, of screw type with Burgers vectors a < 110 > and line directions < 110 >. Cross-slip of the latter may contribute to the multiplication of misfit dislocations necessary for a total misfit relaxation. Few threading dislocations were observed in the main layer. The dislocation configurations in the films are discussed in detail.
Keyworddislocations transmission electron microscopy thin films perovskites
Funding OrganizationNational Natural Science Foundation of China ; National Basic Research Program of China
DOI10.1080/09500831003662503
Indexed BySCI
Language英语
Funding ProjectNational Natural Science Foundation of China[50871115] ; National Basic Research Program of China[2009CB623705]
WOS Research AreaPhysics
WOS SubjectPhysics, Condensed Matter
WOS IDWOS:000276719200003
PublisherTAYLOR & FRANCIS LTD
Citation statistics
Cited Times:5[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/103243
Collection中国科学院金属研究所
Corresponding AuthorZhu, Y. L.
AffiliationChinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110015, Peoples R China
Recommended Citation
GB/T 7714
Zhu, Y. L.,Wang, X.,Zhuo, M. J.,et al. Dislocations in charge-ordered Pr0.5Ca0.5MnO3 epitaxial thin films prepared by a two-step growth technique[J]. PHILOSOPHICAL MAGAZINE LETTERS,2010,90(5):323-336.
APA Zhu, Y. L.,Wang, X.,Zhuo, M. J.,Zhang, Y. Q.,&Ma, X. L..(2010).Dislocations in charge-ordered Pr0.5Ca0.5MnO3 epitaxial thin films prepared by a two-step growth technique.PHILOSOPHICAL MAGAZINE LETTERS,90(5),323-336.
MLA Zhu, Y. L.,et al."Dislocations in charge-ordered Pr0.5Ca0.5MnO3 epitaxial thin films prepared by a two-step growth technique".PHILOSOPHICAL MAGAZINE LETTERS 90.5(2010):323-336.
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