Dislocations in charge-ordered Pr0.5Ca0.5MnO3 epitaxial thin films prepared by a two-step growth technique

doi:10.1080/09500831003662503

IMR OpenIR

	Dislocations in charge-ordered Pr0.5Ca0.5MnO3 epitaxial thin films prepared by a two-step growth technique
	Zhu, Y. L.; Wang, X.; Zhuo, M. J.; Zhang, Y. Q.; Ma, X. L.
通讯作者	Zhu, Y. L.(ylzhu@imr.ac.cn)
	2010
发表期刊	PHILOSOPHICAL MAGAZINE LETTERS
ISSN	0950-0839
卷号	90 期号:5 页码:323-336
摘要	Charge-ordered Pr0.5Ca0.5MnO3 (PCMO) thin films epitaxially grown on SrTiO3 (100) substrates were prepared by a two-step growth technique which resulted in a 10 nm thick first layer and a 70 nm thick main layer. The dislocations in the as-received films were investigated using conventional and high-resolution transmission electron microscopy. Pure-edge misfit dislocations with Burgers vectors a < 011 > and line directions < 100 > were found to be the major interfacial defects responsible for the full misfit relief in the PCMO films. These dislocations constitute a square grid of dislocation lines parallel to the PCMO/SrTiO3 interface. In contrast, two types of dislocations were identified within the first layer. One is of edge type with Burgers vectors a < 110 > and line directions < 001 >; the other, of screw type with Burgers vectors a < 110 > and line directions < 110 >. Cross-slip of the latter may contribute to the multiplication of misfit dislocations necessary for a total misfit relaxation. Few threading dislocations were observed in the main layer. The dislocation configurations in the films are discussed in detail.
关键词	dislocations transmission electron microscopy thin films perovskites
资助者	National Natural Science Foundation of China ; National Basic Research Program of China
DOI	10.1080/09500831003662503
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[50871115] ; National Basic Research Program of China[2009CB623705]
WOS研究方向	Physics
WOS类目	Physics, Condensed Matter
WOS记录号	WOS:000276719200003
出版者	TAYLOR & FRANCIS LTD
引用统计	被引频次：5[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/103243
专题	中国科学院金属研究所
通讯作者	Zhu, Y. L.
作者单位	Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110015, Peoples R China
推荐引用方式 GB/T 7714	Zhu, Y. L.,Wang, X.,Zhuo, M. J.,et al. Dislocations in charge-ordered Pr0.5Ca0.5MnO3 epitaxial thin films prepared by a two-step growth technique[J]. PHILOSOPHICAL MAGAZINE LETTERS,2010,90(5):323-336.
APA	Zhu, Y. L.,Wang, X.,Zhuo, M. J.,Zhang, Y. Q.,&Ma, X. L..(2010).Dislocations in charge-ordered Pr0.5Ca0.5MnO3 epitaxial thin films prepared by a two-step growth technique.PHILOSOPHICAL MAGAZINE LETTERS,90(5),323-336.
MLA	Zhu, Y. L.,et al."Dislocations in charge-ordered Pr0.5Ca0.5MnO3 epitaxial thin films prepared by a two-step growth technique".PHILOSOPHICAL MAGAZINE LETTERS 90.5(2010):323-336.