| Fabrication of uniform Ge-nanocrystals embedded in amorphous SiO2 films using Ge-ion implantation and neutron irradiation methods | |
| Chen, Q.1,2; Lu, T.1,2; Xu, M.3,4; Meng, C.5; Hu, Y.1,2; Sun, K.6,7; Shlimak, I.8,9 | |
| Corresponding Author | Chen, Q.() |
| 2011-02-14 | |
| Source Publication | APPLIED PHYSICS LETTERS
 |
| ISSN | 0003-6951 |
| Volume | 98Issue:7Pages:3 |
| Abstract | Uniform Ge-nanocrystals (Ge-ncs) embedded in amorphous SiO2 film were formed by using Ge-74(+) ion implantation and neutron transmutation doping (NTD) method. Both experimental and theoretical results indicate that the existence of As dopants transmuted from Ge-74 by NTD tunes the already stabilized (crystallized) system back to a metastable state and then activates the mass transfer processes during the transition form this metastable state back to the stable (crystallized) state, and hence the nanocrystal size uniformity and higher volume density of Ge-ncs. This method has the potential to open a route in the three-dimensional nanofabrication. (C) 2011 American Institute of Physics. [doi:10.1063/1.3553770] |
| Funding Organization | NASF of NSFC-CAEP of China ; Program for New Century Excellent Talents in University ; Sichuan Youth Science & Technology Foundation, China |
| DOI | 10.1063/1.3553770 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | NASF of NSFC-CAEP of China[10376020] ; Program for New Century Excellent Talents in University[NCET-04-0874] ; Sichuan Youth Science & Technology Foundation, China[08ZQ026-025] |
| WOS Research Area | Physics |
| WOS Subject | Physics, Applied |
| WOS ID | WOS:000287507200059 |
| Publisher | AMER INST PHYSICS |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/103693 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Chen, Q. |
| Affiliation | 1.Sichuan Univ, Dept Phys, Chengdu 610064, Peoples R China 2.Sichuan Univ, Key Lab Radiat Phys & Technol Minist Educ, Chengdu 610064, Peoples R China 3.Sichuan Normal Univ, Inst Solid State Phys, Chengdu 610068, Peoples R China 4.Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110016, Peoples R China 5.China Acad Engn Phys, Inst Fluid Phys, Key Lab Shock Wave & Detonat Phys Res, Mianyang 621900, Peoples R China 6.Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA 7.Univ Michigan, Elect Microbeam Anal Lab, Ann Arbor, MI 48109 USA 8.Bar Ilan Univ, Dept Phys, Minerva Ctr, IL-52900 Ramat Gan, Israel 9.Bar Ilan Univ, Jack & Pearl Resnick Inst Adv Technol, IL-52900 Ramat Gan, Israel |
| Recommended Citation GB/T 7714 | Chen, Q.,Lu, T.,Xu, M.,et al. Fabrication of uniform Ge-nanocrystals embedded in amorphous SiO2 films using Ge-ion implantation and neutron irradiation methods[J]. APPLIED PHYSICS LETTERS,2011,98(7):3. |
| APA | Chen, Q..,Lu, T..,Xu, M..,Meng, C..,Hu, Y..,...&Shlimak, I..(2011).Fabrication of uniform Ge-nanocrystals embedded in amorphous SiO2 films using Ge-ion implantation and neutron irradiation methods.APPLIED PHYSICS LETTERS,98(7),3. |
| MLA | Chen, Q.,et al."Fabrication of uniform Ge-nanocrystals embedded in amorphous SiO2 films using Ge-ion implantation and neutron irradiation methods".APPLIED PHYSICS LETTERS 98.7(2011):3. |
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