Joining of Ti3SiC2 by Magnetron Sputtering a Layer of Cu or Zr Followed by Heat Treating at Relatively Low Temperatures

doi:10.1111/j.1551-2916.2011.04566.x

IMR OpenIR

	Joining of Ti3SiC2 by Magnetron Sputtering a Layer of Cu or Zr Followed by Heat Treating at Relatively Low Temperatures
	Li, Aijun 1,2; Zhou, Yanchun 1
通讯作者	Zhou, Yanchun(yczhou714@gmail.com)
	2011-09-01
发表期刊	JOURNAL OF THE AMERICAN CERAMIC SOCIETY
ISSN	0002-7820
卷号	94 期号:9 页码:3072-3077
摘要	Ti3SiC2 joining has been successfully achieved by depositing a thin Cu or Zr layer on it and heat treating at low temperatures of 950 degrees or 1100 degrees C in an argon atmosphere, respectively, which are similar to 500 degrees C lower than the previous solid solution joining method. X-ray diffraction and scanning electron microscope analyses reveal that a continuous Cu3Si or Zr-silicide layer forms at the joint interface through the outward diffusion of Si atoms from the Ti3SiC2 substrate into the deposited Cu or Zr layer. The strength of joints is evaluated by tensile bond-strength test and 4-point bending test methods. The Ti3SiC2/Cu/Ti3SiC2 joints always fail from the substrate instead of from the bonding interface, while the Ti3SiC2/Zr/Ti3SiC2 joints fail from the joint interface during tensile bond-strength test. The 4-point bending strength of Ti3SiC2/Cu/Ti3SiC2 joints reaches a value of 238 MPa, which is 68% of the Ti3SiC2 substrate. So joining using a Cu or Zr film as the interlayer followed by heat treating is a practical and efficient method for joining Ti3SiC2.
资助者	National Outstanding Young Scientist Foundation ; Natural Science Foundation of China ; French Atomic Agency (CEA)
DOI	10.1111/j.1551-2916.2011.04566.x
收录类别	SCI
语种	英语
资助项目	National Outstanding Young Scientist Foundation[59925208] ; Natural Science Foundation of China[50232040] ; Natural Science Foundation of China[50302011] ; Natural Science Foundation of China[90403027] ; Natural Science Foundation of China[50772114] ; Natural Science Foundation of China[50832008] ; French Atomic Agency (CEA)
WOS研究方向	Materials Science
WOS类目	Materials Science, Ceramics
WOS记录号	WOS:000295215900062
出版者	WILEY-BLACKWELL
引用统计	被引频次：12[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/103785
专题	中国科学院金属研究所
通讯作者	Zhou, Yanchun
作者单位	1.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China 2.Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China
推荐引用方式 GB/T 7714	Li, Aijun,Zhou, Yanchun. Joining of Ti3SiC2 by Magnetron Sputtering a Layer of Cu or Zr Followed by Heat Treating at Relatively Low Temperatures[J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY,2011,94(9):3072-3077.
APA	Li, Aijun,&Zhou, Yanchun.(2011).Joining of Ti3SiC2 by Magnetron Sputtering a Layer of Cu or Zr Followed by Heat Treating at Relatively Low Temperatures.JOURNAL OF THE AMERICAN CERAMIC SOCIETY,94(9),3072-3077.
MLA	Li, Aijun,et al."Joining of Ti3SiC2 by Magnetron Sputtering a Layer of Cu or Zr Followed by Heat Treating at Relatively Low Temperatures".JOURNAL OF THE AMERICAN CERAMIC SOCIETY 94.9(2011):3072-3077.