Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement

doi:10.1088/1674-1056/20/3/033301

IMR OpenIR

	Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement
	Sun Guo-Sheng 1,2,3; Liu Xing-Fang 2; Wu Hai-Lei 2; Yan Guo-Guo 2; Dong Lin 2; Zheng Liu 2; Zhao Wan-Shun 2; Wang Lei 2; Zeng Yi-Ping 1,2; Li Xi-Guang 3; Wang Zhan-Guo 1
通讯作者	Sun Guo-Sheng(gshsun@red.semi.ac.cn)
	2011-03-01
发表期刊	CHINESE PHYSICS B
ISSN	1674-1056
卷号	20 期号:3 页码:6
摘要	The free carrier density and mobility in n-type 4H-SiC substrates and epilayers were determined by accurately analysing the frequency shift and the full-shape of the longitudinal optic phonon plasmon coupled (LOPC) modes, and compared with those determined by Hall-effect measurement and that provided by the vendors. The transport properties of thick and thin 4H-SiC epilayers grown in both vertical and horizontal reactors were also studied. The free carrier density ranges between 2 x 10(18) cm(-3) and 8x10(18) cm(-3) with a carrier mobility of 30-55 cm(2)/(V.s) for n-type 4H-SiC substrates and 1 x 10(16) -3 x 10(16) cm(-3) with mobility of 290-490 cm(2)/(V.s) for both thick and thin 4H-SiC epilayers grown in a horizontal reactor, while thick 4H-SiC epilayers grown in vertical reactor have a slightly higher carrier concentration of around 8.1 x 10(16) cm(-3) with mobility of 380 cm(2)/(V.s). It was shown that Raman spectroscopy is a potential technique for determining the transport properties of 4H-SiC wafers with the advantage of being able to probe very small volumes and also being non-destructive. This is especially useful for future mass production of 4H-SiC epi-wafers.
关键词	4H-SiC Raman scattering LOPC modes transport properties
资助者	National Natural Science Foundation of China ; Chinese Academy of Sciences ; State Grid Corporation of China
DOI	10.1088/1674-1056/20/3/033301
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[60876003] ; Chinese Academy of Sciences[Y072011000] ; Chinese Academy of Sciences[ISCAS2008T04] ; State Grid Corporation of China[ZL71-09-001]
WOS研究方向	Physics
WOS类目	Physics, Multidisciplinary
WOS记录号	WOS:000289939700027
出版者	IOP PUBLISHING LTD
引用统计	被引频次：11[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/103795
专题	中国科学院金属研究所
通讯作者	Sun Guo-Sheng
作者单位	1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 3.Dongguan Tianyu Semicond Inc, Dongguan 523000, Peoples R China
推荐引用方式 GB/T 7714	Sun Guo-Sheng,Liu Xing-Fang,Wu Hai-Lei,et al. Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement[J]. CHINESE PHYSICS B,2011,20(3):6.
APA	Sun Guo-Sheng.,Liu Xing-Fang.,Wu Hai-Lei.,Yan Guo-Guo.,Dong Lin.,...&Wang Zhan-Guo.(2011).Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement.CHINESE PHYSICS B,20(3),6.
MLA	Sun Guo-Sheng,et al."Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement".CHINESE PHYSICS B 20.3(2011):6.