IMR OpenIR
Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement
Sun Guo-Sheng1,2,3; Liu Xing-Fang2; Wu Hai-Lei2; Yan Guo-Guo2; Dong Lin2; Zheng Liu2; Zhao Wan-Shun2; Wang Lei2; Zeng Yi-Ping1,2; Li Xi-Guang3; Wang Zhan-Guo1
Corresponding AuthorSun Guo-Sheng(gshsun@red.semi.ac.cn)
2011-03-01
Source PublicationCHINESE PHYSICS B
ISSN1674-1056
Volume20Issue:3Pages:6
AbstractThe free carrier density and mobility in n-type 4H-SiC substrates and epilayers were determined by accurately analysing the frequency shift and the full-shape of the longitudinal optic phonon plasmon coupled (LOPC) modes, and compared with those determined by Hall-effect measurement and that provided by the vendors. The transport properties of thick and thin 4H-SiC epilayers grown in both vertical and horizontal reactors were also studied. The free carrier density ranges between 2 x 10(18) cm(-3) and 8x10(18) cm(-3) with a carrier mobility of 30-55 cm(2)/(V.s) for n-type 4H-SiC substrates and 1 x 10(16) -3 x 10(16) cm(-3) with mobility of 290-490 cm(2)/(V.s) for both thick and thin 4H-SiC epilayers grown in a horizontal reactor, while thick 4H-SiC epilayers grown in vertical reactor have a slightly higher carrier concentration of around 8.1 x 10(16) cm(-3) with mobility of 380 cm(2)/(V.s). It was shown that Raman spectroscopy is a potential technique for determining the transport properties of 4H-SiC wafers with the advantage of being able to probe very small volumes and also being non-destructive. This is especially useful for future mass production of 4H-SiC epi-wafers.
Keyword4H-SiC Raman scattering LOPC modes transport properties
Funding OrganizationNational Natural Science Foundation of China ; Chinese Academy of Sciences ; State Grid Corporation of China
DOI10.1088/1674-1056/20/3/033301
Indexed BySCI
Language英语
Funding ProjectNational Natural Science Foundation of China[60876003] ; Chinese Academy of Sciences[Y072011000] ; Chinese Academy of Sciences[ISCAS2008T04] ; State Grid Corporation of China[ZL71-09-001]
WOS Research AreaPhysics
WOS SubjectPhysics, Multidisciplinary
WOS IDWOS:000289939700027
PublisherIOP PUBLISHING LTD
Citation statistics
Cited Times:10[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/103798
Collection中国科学院金属研究所
Corresponding AuthorSun Guo-Sheng
Affiliation1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
2.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
3.Dongguan Tianyu Semicond Inc, Dongguan 523000, Peoples R China
Recommended Citation
GB/T 7714
Sun Guo-Sheng,Liu Xing-Fang,Wu Hai-Lei,et al. Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement[J]. CHINESE PHYSICS B,2011,20(3):6.
APA Sun Guo-Sheng.,Liu Xing-Fang.,Wu Hai-Lei.,Yan Guo-Guo.,Dong Lin.,...&Wang Zhan-Guo.(2011).Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement.CHINESE PHYSICS B,20(3),6.
MLA Sun Guo-Sheng,et al."Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement".CHINESE PHYSICS B 20.3(2011):6.
Files in This Item:
There are no files associated with this item.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Sun Guo-Sheng]'s Articles
[Liu Xing-Fang]'s Articles
[Wu Hai-Lei]'s Articles
Baidu academic
Similar articles in Baidu academic
[Sun Guo-Sheng]'s Articles
[Liu Xing-Fang]'s Articles
[Wu Hai-Lei]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Sun Guo-Sheng]'s Articles
[Liu Xing-Fang]'s Articles
[Wu Hai-Lei]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.