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Perpendicular magnetic anisotropy in 70 nm CoFe2O4 thin films fabricated on SiO2/Si(100) by the sol-gel method
Wang, X. W.; Zhang, Y. Q.1; Meng, H.; Wang, Z. J.; Zhang, Z. D.
Corresponding AuthorZhang, Y. Q.(yqzhang@imr.ac.cn)
2011-07-21
Source PublicationJOURNAL OF ALLOYS AND COMPOUNDS
ISSN0925-8388
Volume509Issue:29Pages:7803-7807
AbstractCobalt ferrite CoFe2O4 films were fabricated on SiO2/Si(1 0 0) by the sol-gel method. Films crystallized at/above 600 degrees C are stoichiometric as expected. With increase of the annealing temperature from 600 degrees C to 750 degrees C, the columnar grain size of CoFe2O4 film increases from 13 nm to 50 nm, resulting in surface roughness increasing from 0.46 nm to 2.55 nm. Magnetic hysteresis loops in both in-plane and out-of-plane directions, at different annealing temperatures, indicate that the films annealed at 750 degrees C exhibit obvious perpendicular magnetic anisotropy. Simultaneously, with the annealing temperature increasing from 600 degrees C to 750 degrees C, the out of plane coercivity increases from 1 kOe to 2.4 kOe and the corresponding saturation magnetization increases from 200 emu/cm(3) to 283 emu/cm(3). In addition, all crystallized films exhibit cluster-like structured magnetic domains. (C) 2011 Elsevier B.V. All rights reserved.
KeywordCoFe2O4 Thin films Sol-gel method Magnetic anisotropy
Funding OrganizationChinese Academy of Sciences ; National Natural Science Foundation of China ; Ministry of Science and Technology of China
DOI10.1016/j.jallcom.2011.05.021
Indexed BySCI
Language英语
Funding ProjectChinese Academy of Sciences ; National Natural Science Foundation of China[50802098] ; National Natural Science Foundation of China[51072202] ; Ministry of Science and Technology of China[2010CB934603]
WOS Research AreaChemistry ; Materials Science ; Metallurgy & Metallurgical Engineering
WOS SubjectChemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS IDWOS:000291473500030
PublisherELSEVIER SCIENCE SA
Citation statistics
Cited Times:29[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/103951
Collection中国科学院金属研究所
Corresponding AuthorZhang, Y. Q.
Affiliation1.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China
2.Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110016, Peoples R China
Recommended Citation
GB/T 7714
Wang, X. W.,Zhang, Y. Q.,Meng, H.,et al. Perpendicular magnetic anisotropy in 70 nm CoFe2O4 thin films fabricated on SiO2/Si(100) by the sol-gel method[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2011,509(29):7803-7807.
APA Wang, X. W.,Zhang, Y. Q.,Meng, H.,Wang, Z. J.,&Zhang, Z. D..(2011).Perpendicular magnetic anisotropy in 70 nm CoFe2O4 thin films fabricated on SiO2/Si(100) by the sol-gel method.JOURNAL OF ALLOYS AND COMPOUNDS,509(29),7803-7807.
MLA Wang, X. W.,et al."Perpendicular magnetic anisotropy in 70 nm CoFe2O4 thin films fabricated on SiO2/Si(100) by the sol-gel method".JOURNAL OF ALLOYS AND COMPOUNDS 509.29(2011):7803-7807.
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