An investigation on InxGa1-xN/GaN multiple quantum well solar cells

doi:10.1088/0022-3727/44/26/265103

IMR OpenIR

	An investigation on InxGa1-xN/GaN multiple quantum well solar cells
	Deng, Qingwen 1; Wang, Xiaoliang 1,2,3; Xiao, Hongling 1,2; Wang, Cuimei 1,2; Yin, Haibo 1,2; Chen, Hong 1,2; Hou, Qifeng 1; Lin, Defeng 1; Li, Jinmin 1,2,3; Wang, Zhanguo 2; Hou, Xun 3
通讯作者	Deng, Qingwen(daven@semi.ac.cn)
	2011-07-06
发表期刊	JOURNAL OF PHYSICS D-APPLIED PHYSICS
ISSN	0022-3727
卷号	44 期号:26 页码:6
摘要	The conversion efficiency of InxGa1-xN/GaN multiple quantum well solar cells is originally investigated in theory based on the ideal diode model and the ideal unity quantum well model. The results reveal that the conversion efficiency partially depends on the width of the quantum well and the thickness of the barrier region but is dominated by the number of quantum wells and indium content of InxGa1-xN. The calculated results are found to be basically trustworthy by comparing with reported experimental results. An In0.15Ga0.85N/GaN multiple quantum well solar cell is successfully fabricated with a conversion efficiency of 0.2%. The main discrepancy between calculated and experimental results is the material quality and manufacturing technology which need to be improved.
资助者	Chinese Academy of Sciences ; National Natural Science Foundation of China ; State Key Development Program for Basic Research of China
DOI	10.1088/0022-3727/44/26/265103
收录类别	SCI
语种	英语
资助项目	Chinese Academy of Sciences[YYYJ-0701-02] ; Chinese Academy of Sciences[ISCAS2008T01] ; Chinese Academy of Sciences[ISCAS2009L01] ; Chinese Academy of Sciences[ISCAS2009L02] ; National Natural Science Foundation of China[60890193] ; National Natural Science Foundation of China[60906006] ; State Key Development Program for Basic Research of China[2006CB604905] ; State Key Development Program for Basic Research of China[2010CB327503]
WOS研究方向	Physics
WOS类目	Physics, Applied
WOS记录号	WOS:000291685100010
出版者	IOP PUBLISHING LTD
引用统计	被引频次：26[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/104129
专题	中国科学院金属研究所
通讯作者	Deng, Qingwen
作者单位	1.Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China 3.ISCAS XJTU Joint Lab Funct Mat & Devices Informat, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Deng, Qingwen,Wang, Xiaoliang,Xiao, Hongling,et al. An investigation on InxGa1-xN/GaN multiple quantum well solar cells[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2011,44(26):6.
APA	Deng, Qingwen.,Wang, Xiaoliang.,Xiao, Hongling.,Wang, Cuimei.,Yin, Haibo.,...&Hou, Xun.(2011).An investigation on InxGa1-xN/GaN multiple quantum well solar cells.JOURNAL OF PHYSICS D-APPLIED PHYSICS,44(26),6.
MLA	Deng, Qingwen,et al."An investigation on InxGa1-xN/GaN multiple quantum well solar cells".JOURNAL OF PHYSICS D-APPLIED PHYSICS 44.26(2011):6.