| Low temperature characteristics of AlGaN/GaN high electron mobility transistors | |
| Lin, D. F.1; Wang, X. L.1,2,3; Xiao, H. L.1,2; Wang, C. M.1,2; Qiang, L. J.1,2; Feng, C.1,2; Chen, H.1,2; Hou, Q. F.1; Deng, Q. W.1; Bi, Y.1; Kang, H.1 | |
| Corresponding Author | Lin, D. F.(dflin@semi.ac.cn) |
| 2011-10-01 | |
| Source Publication | EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
 |
| ISSN | 1286-0042 |
| Volume | 56Issue:1Pages:4 |
| Abstract | The I-V characteristics of AlGaN/GaN high electron mobility transistors in the temperature range between 100 K and 300 K are studied. It is found that both the maximum drain-source current and transconductance decrease with the increase of temperature. Decrease of the electron mobility with increasing temperature is considered to be the main cause for that condition. The threshold voltage shows a forward shift, which can be explained by the increase of Schottky barrier with increasing temperature. It is found that at V(GS) = 0V the drain-source current reduces with the ascending temperature, which should be due to the variation of the electron mobility with the temperature. While at V(GS) = -5 V the drain-source current is found to increase with the ascending temperature, it is suggested to be caused by the positive temperature coefficient of the electron transport in the depleted region. |
| Funding Organization | Chinese Academy of Sciences ; National Nature Sciences Foundation of China ; State Key Development Program for Basic Research of China |
| DOI | 10.1051/epjap/2011110193 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | Chinese Academy of Sciences[YYYJ-0701-02] ; Chinese Academy of Sciences[ISCAS2008T01] ; Chinese Academy of Sciences[ISCAS2009L01] ; Chinese Academy of Sciences[ISCAS2009L02] ; National Nature Sciences Foundation of China[60890193] ; National Nature Sciences Foundation of China[60906006] ; State Key Development Program for Basic Research of China[2006CB604905] ; State Key Development Program for Basic Research of China[2010CB327503] |
| WOS Research Area | Physics |
| WOS Subject | Physics, Applied |
| WOS ID | WOS:000296771000001 |
| Publisher | CAMBRIDGE UNIV PRESS |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/104298 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Lin, D. F. |
| Affiliation | 1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 3.ISCAS XJTU Joint Lab Funct Mat & Devices Informat, Beijing 100083, Peoples R China |
| Recommended Citation GB/T 7714 | Lin, D. F.,Wang, X. L.,Xiao, H. L.,et al. Low temperature characteristics of AlGaN/GaN high electron mobility transistors[J]. EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS,2011,56(1):4. |
| APA | Lin, D. F..,Wang, X. L..,Xiao, H. L..,Wang, C. M..,Qiang, L. J..,...&Kang, H..(2011).Low temperature characteristics of AlGaN/GaN high electron mobility transistors.EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS,56(1),4. |
| MLA | Lin, D. F.,et al."Low temperature characteristics of AlGaN/GaN high electron mobility transistors".EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS 56.1(2011):4. |
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