Low temperature characteristics of AlGaN/GaN high electron mobility transistors

doi:10.1051/epjap/2011110193

IMR OpenIR

	Low temperature characteristics of AlGaN/GaN high electron mobility transistors
	Lin, D. F.1; Wang, X. L.1,2,3; Xiao, H. L.1,2; Wang, C. M.1,2; Qiang, L. J.1,2; Feng, C.1,2; Chen, H.1,2; Hou, Q. F.1; Deng, Q. W.1; Bi, Y.1; Kang, H.1
通讯作者	Lin, D. F.(dflin@semi.ac.cn)
	2011-10-01
发表期刊	EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
ISSN	1286-0042
卷号	56 期号:1 页码:4
摘要	The I-V characteristics of AlGaN/GaN high electron mobility transistors in the temperature range between 100 K and 300 K are studied. It is found that both the maximum drain-source current and transconductance decrease with the increase of temperature. Decrease of the electron mobility with increasing temperature is considered to be the main cause for that condition. The threshold voltage shows a forward shift, which can be explained by the increase of Schottky barrier with increasing temperature. It is found that at V(GS) = 0V the drain-source current reduces with the ascending temperature, which should be due to the variation of the electron mobility with the temperature. While at V(GS) = -5 V the drain-source current is found to increase with the ascending temperature, it is suggested to be caused by the positive temperature coefficient of the electron transport in the depleted region.
资助者	Chinese Academy of Sciences ; National Nature Sciences Foundation of China ; State Key Development Program for Basic Research of China
DOI	10.1051/epjap/2011110193
收录类别	SCI
语种	英语
资助项目	Chinese Academy of Sciences[YYYJ-0701-02] ; Chinese Academy of Sciences[ISCAS2008T01] ; Chinese Academy of Sciences[ISCAS2009L01] ; Chinese Academy of Sciences[ISCAS2009L02] ; National Nature Sciences Foundation of China[60890193] ; National Nature Sciences Foundation of China[60906006] ; State Key Development Program for Basic Research of China[2006CB604905] ; State Key Development Program for Basic Research of China[2010CB327503]
WOS研究方向	Physics
WOS类目	Physics, Applied
WOS记录号	WOS:000296771000001
出版者	CAMBRIDGE UNIV PRESS
引用统计	被引频次：1[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/104298
专题	中国科学院金属研究所
通讯作者	Lin, D. F.
作者单位	1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 3.ISCAS XJTU Joint Lab Funct Mat & Devices Informat, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Lin, D. F.,Wang, X. L.,Xiao, H. L.,et al. Low temperature characteristics of AlGaN/GaN high electron mobility transistors[J]. EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS,2011,56(1):4.
APA	Lin, D. F..,Wang, X. L..,Xiao, H. L..,Wang, C. M..,Qiang, L. J..,...&Kang, H..(2011).Low temperature characteristics of AlGaN/GaN high electron mobility transistors.EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS,56(1),4.
MLA	Lin, D. F.,et al."Low temperature characteristics of AlGaN/GaN high electron mobility transistors".EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS 56.1(2011):4.