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The influence of the InGaN back-barrier on the properties of Al0.3Ga0.7N/AlN/GaN/InGaN/GaN structure
Bi, Y.1; Wang, X. L.1,2; Xiao, H. L.1,2; Wang, C. M.1,2; Peng, E. C.1; Lin, D. F.1; Feng, C.1,2; Jiang, L. J.1,2
Corresponding AuthorBi, Y.(ybi@semi.ac.cn)
2011-07-01
Source PublicationEUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
ISSN1286-0042
Volume55Issue:1Pages:5
AbstractThis is a theoretical study of the InGaN back-barrier on the properties of the Al0.3Ga0.7N/AlN/GaN/InGaN/GaN HEMT structure by self-consistently solving coupled Schrodinger and Poisson equations. Our calculation shows that by increasing the indium composition, the conduction band of the GaN buffer layer is raised and the confinement of 2DEG is improved. However, the additional quantum well formed by InGaN becomes deeper, inducing and confining more electrons in it. Another conductive channel is formed which may impair the device performance. With the increasing InGaN thickness, the well depth remains the same and the conduction band of GaN buffer layer rises, enhancing the confinement of the 2DEG without inducing more electrons in the well. The 2DEG sheet density decreases slightly with the indium composition and the physical mechanism is discussed. Low indium composition and thick InGaN back-barrier layer are beneficial to mitigate the short-channel effects, especially for high-frequency devices.
Funding OrganizationKnowledge Innovation Engineering of Chinese Academy of Sciences ; National Nature Sciences Foundation of China ; State Key Development Program for Basic Research of China ; Chinese Academy of Sciences
DOI10.1051/epjap/2011110184
Indexed BySCI
Language英语
Funding ProjectKnowledge Innovation Engineering of Chinese Academy of Sciences[YYYJ-0701-02] ; National Nature Sciences Foundation of China[60890193] ; National Nature Sciences Foundation of China[60906006] ; State Key Development Program for Basic Research of China[2006CB604905] ; State Key Development Program for Basic Research of China[2010CB327503] ; Chinese Academy of Sciences[ISCAS2008T01] ; Chinese Academy of Sciences[ISCAS2009L01] ; Chinese Academy of Sciences[ISCAS2009L02]
WOS Research AreaPhysics
WOS SubjectPhysics, Applied
WOS IDWOS:000292960600002
PublisherCAMBRIDGE UNIV PRESS
Citation statistics
Cited Times:5[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/104472
Collection中国科学院金属研究所
Corresponding AuthorBi, Y.
Affiliation1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
Recommended Citation
GB/T 7714
Bi, Y.,Wang, X. L.,Xiao, H. L.,et al. The influence of the InGaN back-barrier on the properties of Al0.3Ga0.7N/AlN/GaN/InGaN/GaN structure[J]. EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS,2011,55(1):5.
APA Bi, Y..,Wang, X. L..,Xiao, H. L..,Wang, C. M..,Peng, E. C..,...&Jiang, L. J..(2011).The influence of the InGaN back-barrier on the properties of Al0.3Ga0.7N/AlN/GaN/InGaN/GaN structure.EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS,55(1),5.
MLA Bi, Y.,et al."The influence of the InGaN back-barrier on the properties of Al0.3Ga0.7N/AlN/GaN/InGaN/GaN structure".EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS 55.1(2011):5.
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