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Structural and microstructural analyses of crystalline Er2O3 high-k films grown on Si (001) by laser molecular beam epitaxy
Wang, X.1; Zhu, Y. L.1; He, M.2; Lu, H. B.2; Ma, X. L.1
Corresponding AuthorZhu, Y. L.(ylzhu@imr.ac.cn)
2011-02-01
Source PublicationACTA MATERIALIA
ISSN1359-6454
Volume59Issue:4Pages:1644-1650
AbstractErbium oxide (Er2O3) films are well regarded as being suited for high-k replacement of SiO2 in endeavors to further miniaturize and enhance the performance of microelectronics. Er2O3 films were deposited on Si (0 0 1) substrates by laser molecular beam epitaxy. The structures and microstructures of the films and the interfacial layers were characterized by means of X-ray diffraction (XRD) and transmission electron microscopy (TEM). The results from the XRD and selected area electron diffractions of Er2O3 films with thicknesses of 30 and 100 nm indicate that the films are polycrystalline, with dominant (1 1 1) textures of Er2O3 (1 1 1) // Si (0 0 1). Amorphous layers dotted with small ordered islands were observed and confirmed to be located at the interfaces between the films and the Si substrates with dark-field image and high-resolution TEM. High-resolution Z-contrast imaging, energy dispersive X-ray spectroscopy and energy-filtered imaging were applied to identify the compositions of the interfacial layers. The salient feature is that the layers consist primarily of Er and O, with a very small amount of Si. This kind of Er-O-based interface layer may play a very important role in the electrical and optical properties of the films. (C) 2010 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
KeywordThin films High-resolution electron microscopy Energy-filtered transmission microscopy Interface Dielectrics
Funding OrganizationNational Basic Research Program of China ; National Natural Science Foundation of China
DOI10.1016/j.actamat.2010.11.031
Indexed BySCI
Language英语
Funding ProjectNational Basic Research Program of China[2009CB623705] ; National Natural Science Foundation of China[50871115]
WOS Research AreaMaterials Science ; Metallurgy & Metallurgical Engineering
WOS SubjectMaterials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS IDWOS:000287265100032
PublisherPERGAMON-ELSEVIER SCIENCE LTD
Citation statistics
Cited Times:12[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/104678
Collection中国科学院金属研究所
Corresponding AuthorZhu, Y. L.
Affiliation1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
2.Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
Recommended Citation
GB/T 7714
Wang, X.,Zhu, Y. L.,He, M.,et al. Structural and microstructural analyses of crystalline Er2O3 high-k films grown on Si (001) by laser molecular beam epitaxy[J]. ACTA MATERIALIA,2011,59(4):1644-1650.
APA Wang, X.,Zhu, Y. L.,He, M.,Lu, H. B.,&Ma, X. L..(2011).Structural and microstructural analyses of crystalline Er2O3 high-k films grown on Si (001) by laser molecular beam epitaxy.ACTA MATERIALIA,59(4),1644-1650.
MLA Wang, X.,et al."Structural and microstructural analyses of crystalline Er2O3 high-k films grown on Si (001) by laser molecular beam epitaxy".ACTA MATERIALIA 59.4(2011):1644-1650.
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