| InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage | |
| Zhang Xiao-Bin1; Wang Xiao-Liang1,2; Xiao Hong-Ling1,2; Yang Cui-Bai1,2; Hou Qi-Feng1; Yin Hai-Bo1; Chen Hong1; Wang Zhan-Guo2 | |
| Corresponding Author | Zhang Xiao-Bin(soffeezxb@163.com) |
| 2011-02-01 | |
| Source Publication | CHINESE PHYSICS B
 |
| ISSN | 1674-1056 |
| Volume | 20Issue:2Pages:4 |
| Abstract | In this paper, InGaN/GaN multiple quantum well solar cells (MQWSCs) with an In content of 0.15 are fabricated and studied. The short-circuit density, fill factor and open-circuit voltage (V(oc)) of the device are 0.7 mA/cm(2), 0.40 and 2.22 V, respectively. The results exhibit a significant enhancement of V(oc) compared with those of InGaN-based hetero and homojunction cells. This enhancement indicates that the InGaN/GaN MQWSC offers an effective way for increasing V(oc) of an In-rich In(x)Ga(1-x)N solar cell. The device exhibits an external quantum efficiency (EQE) of 36% (7%) at 388 nm (430 nm). The photovoltaic performance of the device can be improved by optimizing the structure of the InGaN/GaN multiple quantum well. |
| Keyword | InGaN solar cell multiple quantum wells |
| Funding Organization | Chinese Academy of Sciences ; National Natural Science Foundation of China ; State Key Development Program for Basic Research of China |
| DOI | 10.1088/1674-1056/20/2/028402 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | Chinese Academy of Sciences[YYYJ-0701-02] ; Chinese Academy of Sciences[ISCAS2008T01] ; Chinese Academy of Sciences[ISCAS2009L01] ; Chinese Academy of Sciences[ISCAS2009L02] ; National Natural Science Foundation of China[60890193] ; National Natural Science Foundation of China[60906006] ; State Key Development Program for Basic Research of China[2006CB604905] ; State Key Development Program for Basic Research of China[2010CB327503] |
| WOS Research Area | Physics |
| WOS Subject | Physics, Multidisciplinary |
| WOS ID | WOS:000286970600088 |
| Publisher | IOP PUBLISHING LTD |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/104713 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Zhang Xiao-Bin |
| Affiliation | 1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| Recommended Citation GB/T 7714 | Zhang Xiao-Bin,Wang Xiao-Liang,Xiao Hong-Ling,et al. InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage[J]. CHINESE PHYSICS B,2011,20(2):4. |
| APA | Zhang Xiao-Bin.,Wang Xiao-Liang.,Xiao Hong-Ling.,Yang Cui-Bai.,Hou Qi-Feng.,...&Wang Zhan-Guo.(2011).InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage.CHINESE PHYSICS B,20(2),4. |
| MLA | Zhang Xiao-Bin,et al."InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage".CHINESE PHYSICS B 20.2(2011):4. |
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