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The transport mechanism of gate leakage current in AlGaN/GaN high electron mobility transistors
Lin, D. F.1; Wang, X. L.1,2,3; Xiao, H. L.1,2; Wang, C. M.1,2; Jiang, L. J.1,2; Feng, C.1,2; Chen, H.1,2; Hou, Q. F.1; Deng, Q. W.1; Bi, Y.1; Kang, H.1
Corresponding AuthorLin, D. F.(dflin@semi.ac.cn)
2011-09-01
Source PublicationEUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
ISSN1286-0042
Volume55Issue:3Pages:5
AbstractThe temperature dependence of the I-V characteristics on Au/Ni-HEMT Schottky contacts was measured and analyzed. Large deviations from the thermionic emission and thermionic-field emission model were observed in the I-V-T characteristics. The thin surface barrier model only fits the measured curves in the high bias region, but deviates drastically in the low bias region. Using a revised thin surface barrier model, the calculated curves match well with the measured curves. It is also found that tunneling emission model is the dominant current transport mechanism at low temperature, yet thermionic-field emission model is the dominant current transport mechanism at high temperature.
Funding OrganizationChinese Academy of Sciences ; National Nature Sciences Foundation of China ; State Key Development Program for Basic Research of China
DOI10.1051/epjap/2011110209
Indexed BySCI
Language英语
Funding ProjectChinese Academy of Sciences[YYYJ-0701-02] ; Chinese Academy of Sciences[ISCAS2008T01] ; Chinese Academy of Sciences[ISCAS2009L01] ; Chinese Academy of Sciences[ISCAS2009L02] ; National Nature Sciences Foundation of China[60890193] ; National Nature Sciences Foundation of China[60906006] ; State Key Development Program for Basic Research of China[2006CB604905] ; State Key Development Program for Basic Research of China[2010CB327503]
WOS Research AreaPhysics
WOS SubjectPhysics, Applied
WOS IDWOS:000294009500004
PublisherCAMBRIDGE UNIV PRESS
Citation statistics
Cited Times:2[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/104839
Collection中国科学院金属研究所
Corresponding AuthorLin, D. F.
Affiliation1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
3.ISCAS XJTU Joint Lab Funct Mat & Devices Informat, Beijing 100083, Peoples R China
Recommended Citation
GB/T 7714
Lin, D. F.,Wang, X. L.,Xiao, H. L.,et al. The transport mechanism of gate leakage current in AlGaN/GaN high electron mobility transistors[J]. EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS,2011,55(3):5.
APA Lin, D. F..,Wang, X. L..,Xiao, H. L..,Wang, C. M..,Jiang, L. J..,...&Kang, H..(2011).The transport mechanism of gate leakage current in AlGaN/GaN high electron mobility transistors.EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS,55(3),5.
MLA Lin, D. F.,et al."The transport mechanism of gate leakage current in AlGaN/GaN high electron mobility transistors".EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS 55.3(2011):5.
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