VI/II ratio-dependent growth and photoluminescence of cubic CdSe epilayers by molecular beam epitaxy

doi:10.1016/j.jcrysgro.2011.06.029

IMR OpenIR

	VI/II ratio-dependent growth and photoluminescence of cubic CdSe epilayers by molecular beam epitaxy
	Zhao, Jie 1,2; Zeng, Yiping 1,2; Yang, Qiumin 1,2; Li, Yiyang 1,2; Cui, Lijie 1,2; Liu, Chao 1,2
通讯作者	Zhao, Jie(jiezhao@semi.ac.cn)
	2011-08-15
发表期刊	JOURNAL OF CRYSTAL GROWTH
ISSN	0022-0248
卷号	329 期号:1 页码:1-5
摘要	CdSe epilayers were grown on GaAs(0 0 1) substrates by molecular beam epitaxy (MBE) in a wide range of VI/II beam-equivalent-pressure (BEP) ratio from 1.1 to 8.5. X-ray diffraction (XRD) theta-2 theta scan reveals all the CdSe samples possess cubic zinc blende structure with (0 0 1) orientation. The film grown at a low VI/II ratio of 1.1 has rough surface with a three-dimensional (3D) growth mode, while two-dimensional (2D) growth can be established under Se-rich conditions at higher Se/Cd BEP ratios over 4.4. The growth rate increases monotonically with the VI/II ratio and becomes saturated when the ratio is raised to 8.5. The sample grown at a VI/II ratio of 8.5 shows the narrowest full-width at half-maximum (FWHM) of X-ray rocking curve (XRC) for (0 0 4) reflection. No near-band-edge (NBE) emission of CdSe is observed for the sample prepared at a low ratio of 1.1. The NBE emission from cubic CdSe at around 1.67 eV appears and its intensity is markedly enhanced by elevating the VI/II ratio. It is suggested that CdSe epilayer with good structural and optical properties can be prepared under a large VI/II BEP ratio. (C) 2011 Elsevier B.V. All rights reserved.
关键词	Reflection high-energy electron diffraction X-ray diffraction Atomic force microscopy Molecular beam epitaxy Cadmium compounds Semiconducting II-VI materials
资助者	Knowledge Innovation Program Foundation of Institute of semiconductors, Chinese Academy of Sciences ; National Natural Science Foundation of China
DOI	10.1016/j.jcrysgro.2011.06.029
收录类别	SCI
语种	英语
资助项目	Knowledge Innovation Program Foundation of Institute of semiconductors, Chinese Academy of Sciences[09S1010001] ; National Natural Science Foundation of China[0913120000]
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000294104500001
出版者	ELSEVIER SCIENCE BV
引用统计	被引频次：7[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/104943
专题	中国科学院金属研究所
通讯作者	Zhao, Jie
作者单位	1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Zhao, Jie,Zeng, Yiping,Yang, Qiumin,et al. VI/II ratio-dependent growth and photoluminescence of cubic CdSe epilayers by molecular beam epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,2011,329(1):1-5.
APA	Zhao, Jie,Zeng, Yiping,Yang, Qiumin,Li, Yiyang,Cui, Lijie,&Liu, Chao.(2011).VI/II ratio-dependent growth and photoluminescence of cubic CdSe epilayers by molecular beam epitaxy.JOURNAL OF CRYSTAL GROWTH,329(1),1-5.
MLA	Zhao, Jie,et al."VI/II ratio-dependent growth and photoluminescence of cubic CdSe epilayers by molecular beam epitaxy".JOURNAL OF CRYSTAL GROWTH 329.1(2011):1-5.