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Surface characterization of AlGaN grown on Si (111) substrates
Pan, Xu1; Wang, Xiaoliang1,2,3; Xiao, Hongling1,2,3; Wang, Cuimei1,2,3; Feng, Chun1,2,3; Jiang, Lijuan1,2,3; Yin, Haibo1,2,3; Chen, Hong1,2,3
Corresponding AuthorPan, Xu(xpan@semi.ac.cn)
2011-09-15
Source PublicationJOURNAL OF CRYSTAL GROWTH
ISSN0022-0248
Volume331Issue:1Pages:29-32
AbstractUp to 500 nm thick crack-free Al0.25Ga0.75N and Al0.32Ga0.68N epilayers have been grown on Si (111) substrates. The surface morphology of samples was investigated by an optical microscope and a scanning electron microscope (SEM). Pits and shale-like surface structure have been observed. XRD rocking curve measurements indicate the crystal quality of samples. The analyses show that the Al source flux is an important factor in growing AlGaN on Si (111). The information from the Micro-Raman spectra supported that Al atoms are gathered at nearby areas of the pits originated from the AlN/Si (111) interface in the initial stage of AlGaN growth. Crown Copyright (C) 2011 Published by Elsevier B.V. All rights reserved.
KeywordIsland nucleation Raman scattering Si (111) substrate AlGaN epilayers
Funding OrganizationKnowledge Innovation Engineering of Chinese Academy of Sciences ; National Nature Sciences Foundation of China ; State Key Development Program for Basic Research of China ; Chinese Academy of Sciences
DOI10.1016/j.jcrysgro.2011.07.011
Indexed BySCI
Language英语
Funding ProjectKnowledge Innovation Engineering of Chinese Academy of Sciences[YYYJ-0701-02] ; National Nature Sciences Foundation of China[60890193] ; National Nature Sciences Foundation of China[60906006] ; State Key Development Program for Basic Research of China[2006CB604905] ; State Key Development Program for Basic Research of China[2010CB327503] ; Chinese Academy of Sciences[ISCAS2008T01] ; Chinese Academy of Sciences[ISCAS2009L01] ; Chinese Academy of Sciences[ISCAS2009L02]
WOS Research AreaCrystallography ; Materials Science ; Physics
WOS SubjectCrystallography ; Materials Science, Multidisciplinary ; Physics, Applied
WOS IDWOS:000295067900007
PublisherELSEVIER SCIENCE BV
Citation statistics
Cited Times:2[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/105221
Collection中国科学院金属研究所
Corresponding AuthorPan, Xu
Affiliation1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
3.ISCAS XJTU Joint Lab Funct Mat & Devices Informat, Beijing, Peoples R China
Recommended Citation
GB/T 7714
Pan, Xu,Wang, Xiaoliang,Xiao, Hongling,et al. Surface characterization of AlGaN grown on Si (111) substrates[J]. JOURNAL OF CRYSTAL GROWTH,2011,331(1):29-32.
APA Pan, Xu.,Wang, Xiaoliang.,Xiao, Hongling.,Wang, Cuimei.,Feng, Chun.,...&Chen, Hong.(2011).Surface characterization of AlGaN grown on Si (111) substrates.JOURNAL OF CRYSTAL GROWTH,331(1),29-32.
MLA Pan, Xu,et al."Surface characterization of AlGaN grown on Si (111) substrates".JOURNAL OF CRYSTAL GROWTH 331.1(2011):29-32.
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