Positive magnetoresistance in Fe3Se4 nanowires
Li, D.1; Jiang, J. J.; Liu, W.; Zhang, Z. D.
Corresponding AuthorLi, D.(
AbstractWe report the magnetotransport properties of Fe3Se4 nanowire arrays in anodic aluminum oxide (AAO) porous membrane. The temperature dependence of resistance of Fe3Se4 nanowires at a zero field shows thermal activated behavior below 295 K. The exponential relationship in resistance is consistent with the model of strong localization with variable-range hopping (VRH) for a finite one-dimensional wire. Resistance versus magnetic field curves below 100 K show small positive magnetoresistance (MR). The field dependencies of log[R(H)/R(0)] explain the positive MR as the effect of magnetic field on the VRH conduction. (C) 2011 American Institute of Physics. [doi:10.1063/1.3544508]
Funding OrganizationNational Natural Science Foundation of China ; National Basic Research Program of China ; Ministry of Science and Technology of China
Indexed BySCI
Funding ProjectNational Natural Science Foundation of China[50831006] ; National Natural Science Foundation of China[50701045] ; National Basic Research Program of China[2010CB934603] ; Ministry of Science and Technology of China
WOS Research AreaPhysics
WOS SubjectPhysics, Applied
WOS IDWOS:000289952100114
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Cited Times:12[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Corresponding AuthorLi, D.
Affiliation1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
2.Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110016, Peoples R China
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GB/T 7714
Li, D.,Jiang, J. J.,Liu, W.,et al. Positive magnetoresistance in Fe3Se4 nanowires[J]. JOURNAL OF APPLIED PHYSICS,2011,109(7):3.
APA Li, D.,Jiang, J. J.,Liu, W.,&Zhang, Z. D..(2011).Positive magnetoresistance in Fe3Se4 nanowires.JOURNAL OF APPLIED PHYSICS,109(7),3.
MLA Li, D.,et al."Positive magnetoresistance in Fe3Se4 nanowires".JOURNAL OF APPLIED PHYSICS 109.7(2011):3.
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