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Growth and annealing of zinc-blende CdSe thin films on GaAs (001) by molecular beam epitaxy
Yang, Qiumin1,2; Zhao, Jie1,2; Guan, Min1,2; Liu, Chao1,2; Cui, Lijie1,2; Han, Dejun3; Zeng, Yiping1,2
Corresponding AuthorZeng, Yiping(ypzeng@red.semi.ac.cn)
2011-08-15
Source PublicationAPPLIED SURFACE SCIENCE
ISSN0169-4332
Volume257Issue:21Pages:9038-9043
AbstractCdSe thin films have been grown on GaAs (0 0 1) substrates by molecular beam epitaxy (MBE). The effects of substrate temperature and annealing treatment on the structural properties of CdSe layers were investigated. The growth rate slightly decreases due to the accelerated desorption of Cd from CdSe surface with an increase in the temperature. The sample grown at 260 degrees C shows a polycrystalline structure with rough surface. As the temperature increases over 300 degrees C, crystalline CdSe (0 0 1) epilayers with zinc-blende structure are achieved and the structural quality is improved remarkably. The epilayer grown at 340 degrees C displays the narrowest full-width at half-maximum (FWHM) from (0 0 4) reflection in double-crystal Xray rocking curve (DCXRC) and the smallest root-mean-square (RMS) roughness of 0.816 nm. Additionally, samples fabricated at 320 degrees C were annealed in air for 30 min to study the films' thermal stability. X-ray diffraction (XRD) results indicate that the zinc-blende structure remains unchanged when the annealing temperature is elevated to 460 degrees C, meaning a good thermal stability of the cubic CdSe epilayers. Crown Copyright (C) 2011 Published by Elsevier B.V. All rights reserved.
KeywordCdSe Molecular beam epitaxy Reflection high energy electron diffraction X-ray diffraction Atomic force microscopy
Funding OrganizationKnowledge Innovation Program Foundation of Institute of semiconductors, CAS ; National Natural Science Foundation of China
DOI10.1016/j.apsusc.2011.05.096
Indexed BySCI
Language英语
Funding ProjectKnowledge Innovation Program Foundation of Institute of semiconductors, CAS[09S1010001] ; National Natural Science Foundation of China[0913120000]
WOS Research AreaChemistry ; Materials Science ; Physics
WOS SubjectChemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
WOS IDWOS:000292539700046
PublisherELSEVIER SCIENCE BV
Citation statistics
Cited Times:17[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/105242
Collection中国科学院金属研究所
Corresponding AuthorZeng, Yiping
Affiliation1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
2.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
3.Beijing Normal Univ, Coll Nucl Sci & Technol, Beijing 100875, Peoples R China
Recommended Citation
GB/T 7714
Yang, Qiumin,Zhao, Jie,Guan, Min,et al. Growth and annealing of zinc-blende CdSe thin films on GaAs (001) by molecular beam epitaxy[J]. APPLIED SURFACE SCIENCE,2011,257(21):9038-9043.
APA Yang, Qiumin.,Zhao, Jie.,Guan, Min.,Liu, Chao.,Cui, Lijie.,...&Zeng, Yiping.(2011).Growth and annealing of zinc-blende CdSe thin films on GaAs (001) by molecular beam epitaxy.APPLIED SURFACE SCIENCE,257(21),9038-9043.
MLA Yang, Qiumin,et al."Growth and annealing of zinc-blende CdSe thin films on GaAs (001) by molecular beam epitaxy".APPLIED SURFACE SCIENCE 257.21(2011):9038-9043.
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