| Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition | |
| Wei Meng1; Wang Xiao-Liang1,2; Xiao Hong-Ling1,2; Wang Cui-Mei1,2; Pan Xu1; Hou Qi-Feng1; Wang Zhan-Guo2 | |
| Corresponding Author | Wei Meng(mengw@semi.ac.cn) |
| 2011-04-01 | |
| Source Publication | CHINESE PHYSICS LETTERS
 |
| ISSN | 0256-307X |
| Volume | 28Issue:4Pages:4 |
| Abstract | A 2 mu m high quality crack-free GaN film was successfully grown on 2-inch Si(111) substrates by metal organic chemical vapor deposition with a high temperature AlN/graded-AlGaN multibuffer and an AlN/GaN superlattice interlayer. It is found that the structures, as well as the thicknesses of the multibuffer and interlayer, are crucial for the growth of a crack-free GaN epilayer. The GaN(0002) XRD FWHM of the crack-free sample is 479.8 arcsec, indicating good crystal quality. An AlGaN/GaN heterostructure was grown and tested by Van der Pauw Hall measurement. The electron mobility of two-dimensional electron gas increases from 1928 cm(2)/V.s to 12277 cm(2)/V.s when the test-temperature decreases from room temperature to liquid nitrogen temperature. The electron mobility is comparable to that of AlGaN/GaN heterostructures grown on sapphire, and the largest value is obtained for an AlGaN/GaN/Si(111) heterostructure grown by metal organic chemical vapor deposition. |
| Funding Organization | Chinese Academy of Sciences ; National Natural Science Foundation of China ; National Basic Research Program of China |
| DOI | 10.1088/0256-307X/28/4/048102 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | Chinese Academy of Sciences[YYYJ-0701-02] ; Chinese Academy of Sciences[IS-CAS2008T01] ; Chinese Academy of Sciences[ISCAS2009L01] ; Chinese Academy of Sciences[ISCAS2009L02] ; National Natural Science Foundation of China[60890193] ; National Natural Science Foundation of China[60906006] ; National Basic Research Program of China[2006CB604905] ; National Basic Research Program of China[2010CB327503] |
| WOS Research Area | Physics |
| WOS Subject | Physics, Multidisciplinary |
| WOS ID | WOS:000289195200062 |
| Publisher | IOP PUBLISHING LTD |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/105325 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Wei Meng |
| Affiliation | 1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| Recommended Citation GB/T 7714 | Wei Meng,Wang Xiao-Liang,Xiao Hong-Ling,et al. Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition[J]. CHINESE PHYSICS LETTERS,2011,28(4):4. |
| APA | Wei Meng.,Wang Xiao-Liang.,Xiao Hong-Ling.,Wang Cui-Mei.,Pan Xu.,...&Wang Zhan-Guo.(2011).Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition.CHINESE PHYSICS LETTERS,28(4),4. |
| MLA | Wei Meng,et al."Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition".CHINESE PHYSICS LETTERS 28.4(2011):4. |
| Files in This Item: | There are no files associated with this item. | |||||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment