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Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition
Wei Meng1; Wang Xiao-Liang1,2; Xiao Hong-Ling1,2; Wang Cui-Mei1,2; Pan Xu1; Hou Qi-Feng1; Wang Zhan-Guo2
Corresponding AuthorWei Meng(mengw@semi.ac.cn)
2011-04-01
Source PublicationCHINESE PHYSICS LETTERS
ISSN0256-307X
Volume28Issue:4Pages:4
AbstractA 2 mu m high quality crack-free GaN film was successfully grown on 2-inch Si(111) substrates by metal organic chemical vapor deposition with a high temperature AlN/graded-AlGaN multibuffer and an AlN/GaN superlattice interlayer. It is found that the structures, as well as the thicknesses of the multibuffer and interlayer, are crucial for the growth of a crack-free GaN epilayer. The GaN(0002) XRD FWHM of the crack-free sample is 479.8 arcsec, indicating good crystal quality. An AlGaN/GaN heterostructure was grown and tested by Van der Pauw Hall measurement. The electron mobility of two-dimensional electron gas increases from 1928 cm(2)/V.s to 12277 cm(2)/V.s when the test-temperature decreases from room temperature to liquid nitrogen temperature. The electron mobility is comparable to that of AlGaN/GaN heterostructures grown on sapphire, and the largest value is obtained for an AlGaN/GaN/Si(111) heterostructure grown by metal organic chemical vapor deposition.
Funding OrganizationChinese Academy of Sciences ; National Natural Science Foundation of China ; National Basic Research Program of China
DOI10.1088/0256-307X/28/4/048102
Indexed BySCI
Language英语
Funding ProjectChinese Academy of Sciences[YYYJ-0701-02] ; Chinese Academy of Sciences[IS-CAS2008T01] ; Chinese Academy of Sciences[ISCAS2009L01] ; Chinese Academy of Sciences[ISCAS2009L02] ; National Natural Science Foundation of China[60890193] ; National Natural Science Foundation of China[60906006] ; National Basic Research Program of China[2006CB604905] ; National Basic Research Program of China[2010CB327503]
WOS Research AreaPhysics
WOS SubjectPhysics, Multidisciplinary
WOS IDWOS:000289195200062
PublisherIOP PUBLISHING LTD
Citation statistics
Cited Times:4[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/105325
Collection中国科学院金属研究所
Corresponding AuthorWei Meng
Affiliation1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
Recommended Citation
GB/T 7714
Wei Meng,Wang Xiao-Liang,Xiao Hong-Ling,et al. Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition[J]. CHINESE PHYSICS LETTERS,2011,28(4):4.
APA Wei Meng.,Wang Xiao-Liang.,Xiao Hong-Ling.,Wang Cui-Mei.,Pan Xu.,...&Wang Zhan-Guo.(2011).Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition.CHINESE PHYSICS LETTERS,28(4),4.
MLA Wei Meng,et al."Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition".CHINESE PHYSICS LETTERS 28.4(2011):4.
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