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Interfacial structure of V2AlC thin films deposited on (11(2)over-bar0)-sapphire
Sigumonrong, Darwin P.; Zhang, Jie2; Zhou, Yanchun2; Music, Denis; Emmerlich, Jens; Mayer, Joachim1; Schneider, Jochen M.
Corresponding AuthorZhang, Jie(zhang@mch.rwth-aachen.de)
2011-02-01
Source PublicationSCRIPTA MATERIALIA
ISSN1359-6462
Volume64Issue:4Pages:347-350
AbstractLocal epitaxy between V2AlC and sapphire without intentionally or spontaneously formed seed layers was observed by transmission electron microscopy. Our ab initio calculations suggest that the most stable interfacial structure is characterized by the stacking sequence...C-V-Al-V//O-Al..., exhibiting the largest work of separation for the configurations studied and hence strong interfacial bonding. It is proposed that a small misfit accompanied by strong interfacial bonding enable the local epitaxial growth of V2AlC on (11 (2) over bar0)-sapphire. (C) 2010 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
KeywordMAX-phase thin film TEM Epitaxial growth Ab initio calculation
Funding OrganizationDeutsche Forschungsgemeinschaft (DFG) within the Collaborative Research Center
DOI10.1016/j.scriptamat.2010.10.035
Indexed BySCI
Language英语
Funding ProjectDeutsche Forschungsgemeinschaft (DFG) within the Collaborative Research Center[561]
WOS Research AreaScience & Technology - Other Topics ; Materials Science ; Metallurgy & Metallurgical Engineering
WOS SubjectNanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS IDWOS:000285951600011
PublisherPERGAMON-ELSEVIER SCIENCE LTD
Citation statistics
Cited Times:20[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/105469
Collection中国科学院金属研究所
Corresponding AuthorZhang, Jie
Affiliation1.Rhein Westfal TH Aachen, Cent Facil Electron Microscopy, D-52074 Aachen, Germany
2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
Recommended Citation
GB/T 7714
Sigumonrong, Darwin P.,Zhang, Jie,Zhou, Yanchun,et al. Interfacial structure of V2AlC thin films deposited on (11(2)over-bar0)-sapphire[J]. SCRIPTA MATERIALIA,2011,64(4):347-350.
APA Sigumonrong, Darwin P..,Zhang, Jie.,Zhou, Yanchun.,Music, Denis.,Emmerlich, Jens.,...&Schneider, Jochen M..(2011).Interfacial structure of V2AlC thin films deposited on (11(2)over-bar0)-sapphire.SCRIPTA MATERIALIA,64(4),347-350.
MLA Sigumonrong, Darwin P.,et al."Interfacial structure of V2AlC thin films deposited on (11(2)over-bar0)-sapphire".SCRIPTA MATERIALIA 64.4(2011):347-350.
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