Comparison of as-grown and annealed GaN/InGaN:Mg samples

doi:10.1088/0022-3727/44/34/345101

IMR OpenIR

	Comparison of as-grown and annealed GaN/InGaN:Mg samples
	Deng, Qingwen 1; Wang, Xiaoliang 1,2,3; Xiao, Hongling 1,2; Wang, Cuimei 1,2; Yin, Haibo 1,2; Chen, Hong 1,2; Lin, Defeng 1; Jiang, Lijuan 1,2; Feng, Chun 1,2; Li, Jinmin 1,2,3; Wang, Zhanguo 2; Hou, Xun 3
通讯作者	Deng, Qingwen(daven@semi.ac.cn)
	2011-08-31
发表期刊	JOURNAL OF PHYSICS D-APPLIED PHYSICS
ISSN	0022-3727
卷号	44 期号:34 页码:5
摘要	Mg-doped InGaN was grown on unintentionally doped GaN layer, and Mg and defect behaviours in both GaN and InGaN : Mg were investigated through photoluminescence measurement at 7K. Mg acceptor was found in unintentionally doped GaN after thermal annealing in N(2) ambient, and Mg activation energy was estimated to be 200 meV and 110 meV for GaN and InGaN, respectively. Particularly, the ultraviolet band (3.0-3.2 eV) in the GaN layer was infrequently observed in the unannealed sample but quenched in the annealed sample; this band may be associated with oxygen-substituted nitrogen defects. Moreover, the measurement errors of photoluminescence and x-ray diffraction originated from strain were taken into account.
资助者	Knowledge Innovation Engineering of Chinese Academy of Sciences ; National Nature Sciences Foundation of China ; State Key Development Program for Basic Research of China ; Chinese Academy of Sciences
DOI	10.1088/0022-3727/44/34/345101
收录类别	SCI
语种	英语
资助项目	Knowledge Innovation Engineering of Chinese Academy of Sciences[YYYJ-0701-02] ; National Nature Sciences Foundation of China[60890193] ; National Nature Sciences Foundation of China[60906006] ; State Key Development Program for Basic Research of China[2006CB604905] ; State Key Development Program for Basic Research of China[2010CB327503] ; Chinese Academy of Sciences[ISCAS2008T01] ; Chinese Academy of Sciences[ISCAS2009L01] ; Chinese Academy of Sciences[ISCAS2009L02]
WOS研究方向	Physics
WOS类目	Physics, Applied
WOS记录号	WOS:000294761500005
出版者	IOP PUBLISHING LTD
引用统计	被引频次：8[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/105547
专题	中国科学院金属研究所
通讯作者	Deng, Qingwen
作者单位	1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 3.ISCAS XJTU Joint Lab Funct Mat & Devices Informat, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Deng, Qingwen,Wang, Xiaoliang,Xiao, Hongling,et al. Comparison of as-grown and annealed GaN/InGaN:Mg samples[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2011,44(34):5.
APA	Deng, Qingwen.,Wang, Xiaoliang.,Xiao, Hongling.,Wang, Cuimei.,Yin, Haibo.,...&Hou, Xun.(2011).Comparison of as-grown and annealed GaN/InGaN:Mg samples.JOURNAL OF PHYSICS D-APPLIED PHYSICS,44(34),5.
MLA	Deng, Qingwen,et al."Comparison of as-grown and annealed GaN/InGaN:Mg samples".JOURNAL OF PHYSICS D-APPLIED PHYSICS 44.34(2011):5.