| Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN | |
| Hou, Qifeng1; Wang, Xiaoliang1,2,3; Xiao, Hongling1,2,3; Wang, Cuimei1,2,3; Yang, Cuibai1,2,3; Yin, Haibo1; Deng, Qingwen1; Li, Jinmin1,3; Wang, Zhanguo2; Hou, Xun3 | |
| Corresponding Author | Hou, Qifeng(qfhou@semi.ac.cn) |
| 2011-03-07 | |
| Source Publication | APPLIED PHYSICS LETTERS
 |
| ISSN | 0003-6951 |
| Volume | 98Issue:10Pages:3 |
| Abstract | The influence of electric field on persistent photoconductivity in unintentionally doped n-GaN is investigated. It was found that under higher electric field the build-up course was slowed down while the decay course was accelerated. After a higher-voltage pulse, it was observed that the current dropped to a value lower than the dark current, and a current increase that lasted for thousands of seconds was observed. It is suggested that the above phenomena should be caused by the increase in capture rate of electron traps with electric field and are related to the Coulomb-repulsive characteristic of defects related to persistent photoconductivity. (C) 2011 American Institute of Physics. [doi:10.1063/1.3562008] |
| Funding Organization | Knowledge Innovation Engineering of Chinese Academy of Sciences ; National Nature Sciences Foundation of China ; State Key Development Program for Basic Research of China ; Chinese Academy of Sciences |
| DOI | 10.1063/1.3562008 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | Knowledge Innovation Engineering of Chinese Academy of Sciences[YYYJ-0701-02] ; National Nature Sciences Foundation of China[60890193] ; National Nature Sciences Foundation of China[60906006] ; State Key Development Program for Basic Research of China[2006CB604905] ; State Key Development Program for Basic Research of China[2010CB327503] ; Chinese Academy of Sciences[ISCAS2008T01] ; Chinese Academy of Sciences[ISCAS2009L01] ; Chinese Academy of Sciences[ISCAS2009L02] |
| WOS Research Area | Physics |
| WOS Subject | Physics, Applied |
| WOS ID | WOS:000288277200030 |
| Publisher | AMER INST PHYSICS |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/105727 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Hou, Qifeng |
| Affiliation | 1.Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 3.ISCAS XJTU Joint Lab Funct Mat & Devices Informat, Beijing 100083, Peoples R China |
| Recommended Citation GB/T 7714 | Hou, Qifeng,Wang, Xiaoliang,Xiao, Hongling,et al. Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN[J]. APPLIED PHYSICS LETTERS,2011,98(10):3. |
| APA | Hou, Qifeng.,Wang, Xiaoliang.,Xiao, Hongling.,Wang, Cuimei.,Yang, Cuibai.,...&Hou, Xun.(2011).Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN.APPLIED PHYSICS LETTERS,98(10),3. |
| MLA | Hou, Qifeng,et al."Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN".APPLIED PHYSICS LETTERS 98.10(2011):3. |
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