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Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN
Hou, Qifeng1; Wang, Xiaoliang1,2,3; Xiao, Hongling1,2,3; Wang, Cuimei1,2,3; Yang, Cuibai1,2,3; Yin, Haibo1; Deng, Qingwen1; Li, Jinmin1,3; Wang, Zhanguo2; Hou, Xun3
Corresponding AuthorHou, Qifeng(qfhou@semi.ac.cn)
2011-03-07
Source PublicationAPPLIED PHYSICS LETTERS
ISSN0003-6951
Volume98Issue:10Pages:3
AbstractThe influence of electric field on persistent photoconductivity in unintentionally doped n-GaN is investigated. It was found that under higher electric field the build-up course was slowed down while the decay course was accelerated. After a higher-voltage pulse, it was observed that the current dropped to a value lower than the dark current, and a current increase that lasted for thousands of seconds was observed. It is suggested that the above phenomena should be caused by the increase in capture rate of electron traps with electric field and are related to the Coulomb-repulsive characteristic of defects related to persistent photoconductivity. (C) 2011 American Institute of Physics. [doi:10.1063/1.3562008]
Funding OrganizationKnowledge Innovation Engineering of Chinese Academy of Sciences ; National Nature Sciences Foundation of China ; State Key Development Program for Basic Research of China ; Chinese Academy of Sciences
DOI10.1063/1.3562008
Indexed BySCI
Language英语
Funding ProjectKnowledge Innovation Engineering of Chinese Academy of Sciences[YYYJ-0701-02] ; National Nature Sciences Foundation of China[60890193] ; National Nature Sciences Foundation of China[60906006] ; State Key Development Program for Basic Research of China[2006CB604905] ; State Key Development Program for Basic Research of China[2010CB327503] ; Chinese Academy of Sciences[ISCAS2008T01] ; Chinese Academy of Sciences[ISCAS2009L01] ; Chinese Academy of Sciences[ISCAS2009L02]
WOS Research AreaPhysics
WOS SubjectPhysics, Applied
WOS IDWOS:000288277200030
PublisherAMER INST PHYSICS
Citation statistics
Cited Times:9[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/105727
Collection中国科学院金属研究所
Corresponding AuthorHou, Qifeng
Affiliation1.Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, Beijing 100083, Peoples R China
2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
3.ISCAS XJTU Joint Lab Funct Mat & Devices Informat, Beijing 100083, Peoples R China
Recommended Citation
GB/T 7714
Hou, Qifeng,Wang, Xiaoliang,Xiao, Hongling,et al. Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN[J]. APPLIED PHYSICS LETTERS,2011,98(10):3.
APA Hou, Qifeng.,Wang, Xiaoliang.,Xiao, Hongling.,Wang, Cuimei.,Yang, Cuibai.,...&Hou, Xun.(2011).Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN.APPLIED PHYSICS LETTERS,98(10),3.
MLA Hou, Qifeng,et al."Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN".APPLIED PHYSICS LETTERS 98.10(2011):3.
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