Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN

doi:10.1063/1.3562008

IMR OpenIR

	Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN
	Hou, Qifeng 1; Wang, Xiaoliang 1,2,3; Xiao, Hongling 1,2,3; Wang, Cuimei 1,2,3; Yang, Cuibai 1,2,3; Yin, Haibo 1; Deng, Qingwen 1; Li, Jinmin 1,3; Wang, Zhanguo 2; Hou, Xun 3
通讯作者	Hou, Qifeng(qfhou@semi.ac.cn)
	2011-03-07
发表期刊	APPLIED PHYSICS LETTERS
ISSN	0003-6951
卷号	98 期号:10 页码:3
摘要	The influence of electric field on persistent photoconductivity in unintentionally doped n-GaN is investigated. It was found that under higher electric field the build-up course was slowed down while the decay course was accelerated. After a higher-voltage pulse, it was observed that the current dropped to a value lower than the dark current, and a current increase that lasted for thousands of seconds was observed. It is suggested that the above phenomena should be caused by the increase in capture rate of electron traps with electric field and are related to the Coulomb-repulsive characteristic of defects related to persistent photoconductivity. (C) 2011 American Institute of Physics. [doi:10.1063/1.3562008]
资助者	Knowledge Innovation Engineering of Chinese Academy of Sciences ; National Nature Sciences Foundation of China ; State Key Development Program for Basic Research of China ; Chinese Academy of Sciences
DOI	10.1063/1.3562008
收录类别	SCI
语种	英语
资助项目	Knowledge Innovation Engineering of Chinese Academy of Sciences[YYYJ-0701-02] ; National Nature Sciences Foundation of China[60890193] ; National Nature Sciences Foundation of China[60906006] ; State Key Development Program for Basic Research of China[2006CB604905] ; State Key Development Program for Basic Research of China[2010CB327503] ; Chinese Academy of Sciences[ISCAS2008T01] ; Chinese Academy of Sciences[ISCAS2009L01] ; Chinese Academy of Sciences[ISCAS2009L02]
WOS研究方向	Physics
WOS类目	Physics, Applied
WOS记录号	WOS:000288277200030
出版者	AMER INST PHYSICS
引用统计	被引频次：16[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/105727
专题	中国科学院金属研究所
通讯作者	Hou, Qifeng
作者单位	1.Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 3.ISCAS XJTU Joint Lab Funct Mat & Devices Informat, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Hou, Qifeng,Wang, Xiaoliang,Xiao, Hongling,et al. Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN[J]. APPLIED PHYSICS LETTERS,2011,98(10):3.
APA	Hou, Qifeng.,Wang, Xiaoliang.,Xiao, Hongling.,Wang, Cuimei.,Yang, Cuibai.,...&Hou, Xun.(2011).Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN.APPLIED PHYSICS LETTERS,98(10),3.
MLA	Hou, Qifeng,et al."Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN".APPLIED PHYSICS LETTERS 98.10(2011):3.