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Electron mobility in modulation-doped AlSb/InAs quantum wells
Li, Yanbo1,2; Zhang, Yang1,2; Zeng, Yiping1,2
Corresponding AuthorZhang, Yang(terahertzantenna@163.com)
2011-04-01
Source PublicationJOURNAL OF APPLIED PHYSICS
ISSN0021-8979
Volume109Issue:7Pages:7
AbstractWe present a theoretical study of electron mobility in modulation-doped AlSb/InAs quantum wells. The theory also accounts for the nonparabolicity effect. All major scattering mechanisms, including scattering by deformation potential and piezoelectric acoustic phonons, polar optical phonons, ionized impurities, and interface roughness, have been included in our calculations. The low field transport properties of the two dimensional electron gas (2DEG) in the AlSb/InAs quantum wells are studied as a function of temperature, quantum well width, and spacer width and strategies for optimizing the 2DEG mobility are discussed. Depending on the quantum well parameters, the high-mobility limit in this quantum well structure may be determined by either ionized impurity scattering or interface-roughness scattering. The calculated 2DEG mobilities are in very good agreement with the reported experimental data for modulation-doped AlSb/InAs quantum wells. (C) 2011 American Institute of Physics. [doi:10.1063/1.3552417]
Funding OrganizationChinese Academy of Sciences ; Beijing Municipal Natural Science Foundation ; Beijing Nova Program
DOI10.1063/1.3552417
Indexed BySCI
Language英语
Funding ProjectChinese Academy of Sciences[ISCAS2009T04] ; Beijing Municipal Natural Science Foundation[2112040] ; Beijing Nova Program[2010B056]
WOS Research AreaPhysics
WOS SubjectPhysics, Applied
WOS IDWOS:000289949000051
PublisherAMER INST PHYSICS
Citation statistics
Cited Times:7[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/105863
Collection中国科学院金属研究所
Corresponding AuthorZhang, Yang
Affiliation1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
2.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
Recommended Citation
GB/T 7714
Li, Yanbo,Zhang, Yang,Zeng, Yiping. Electron mobility in modulation-doped AlSb/InAs quantum wells[J]. JOURNAL OF APPLIED PHYSICS,2011,109(7):7.
APA Li, Yanbo,Zhang, Yang,&Zeng, Yiping.(2011).Electron mobility in modulation-doped AlSb/InAs quantum wells.JOURNAL OF APPLIED PHYSICS,109(7),7.
MLA Li, Yanbo,et al."Electron mobility in modulation-doped AlSb/InAs quantum wells".JOURNAL OF APPLIED PHYSICS 109.7(2011):7.
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