Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN

doi:10.1088/0256-307X/28/3/037102

IMR OpenIR

	Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN
	Hou Qi-Feng 1; Wang Xiao-Liang 1,2; Xiao Hong-Ling 1,2; Wang Cui-Mei 1,2; Yang Cui-Bai 1,2; Yin Hai-Bo 1; Li Jin-Min 1; Wang Zhan-Guo 2
通讯作者	Hou Qi-Feng(qfhou@semi.ac.cn)
	2011-03-01
发表期刊	CHINESE PHYSICS LETTERS
ISSN	0256-307X
卷号	28 期号:3 页码:4
摘要	Yellow and blue luminescence in undoped GaN layers with different resistivities are studied by cathodoluminescence. Intense yellow and blue luminescence bands are observed in semi-insulating GaN, while in n-GaN the yellow luminescence and blue luminescence bands are very weak. The stronger yellow and blue luminescences in semi-insulating GaN are correlated to the higher edge-type dislocation density. The scanning cathodoluminescence image reveals strong defect-related luminescence at the grain boundaries where the dislocations accumulate. It is found that the relative intensity of the blue luminescence band to the yellow luminescence band increases with the cathodoluminescence beam energies and is larger in n-GaN with a lower density of edge-type dislocations. An approximately 3.35 eV shoulder next to the near-band-edge peak is observed in n-GaN but not in semi-insulating GaN. A redshift of the near-band-edge peak with cathodoluminescence beam energy is observed in both samples and is explained by internal absorption.
资助者	Chinese Academy of Sciences ; National Natural Sciences Foundation of China ; National Basic Research Program of China
DOI	10.1088/0256-307X/28/3/037102
收录类别	SCI
语种	英语
资助项目	Chinese Academy of Sciences[YYYJ-0701-02] ; Chinese Academy of Sciences[ISCAS2008T01] ; Chinese Academy of Sciences[ISCAS2009L01] ; Chinese Academy of Sciences[ISCAS2009L02] ; National Natural Sciences Foundation of China[60890193] ; National Natural Sciences Foundation of China[60906006] ; National Basic Research Program of China[2006CB604905] ; National Basic Research Program of China[2010CB327503]
WOS研究方向	Physics
WOS类目	Physics, Multidisciplinary
WOS记录号	WOS:000288120900050
出版者	IOP PUBLISHING LTD
引用统计	被引频次：5[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/105910
专题	中国科学院金属研究所
通讯作者	Hou Qi-Feng
作者单位	1.Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Hou Qi-Feng,Wang Xiao-Liang,Xiao Hong-Ling,et al. Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN[J]. CHINESE PHYSICS LETTERS,2011,28(3):4.
APA	Hou Qi-Feng.,Wang Xiao-Liang.,Xiao Hong-Ling.,Wang Cui-Mei.,Yang Cui-Bai.,...&Wang Zhan-Guo.(2011).Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN.CHINESE PHYSICS LETTERS,28(3),4.
MLA	Hou Qi-Feng,et al."Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN".CHINESE PHYSICS LETTERS 28.3(2011):4.