| Growth and characterization of Bi2Se3 thin films by pulsed laser deposition using alloy target | |
| Meng, Lijian1,2; Meng, Hui3; Gong, Wenjie3; Liu, Wei3; Zhang, Zhidong3 | |
| Corresponding Author | Meng, Lijian(ljm@isep.ipp.pt) |
| 2011-09-01 | |
| Source Publication | THIN SOLID FILMS
 |
| ISSN | 0040-6090 |
| Volume | 519Issue:22Pages:7627-7631 |
| Abstract | Bi2Se3 thin films were deposited on the (100) oriented Si substrates by pulsed laser deposition technique at different substrate temperatures (room temperature -400 degrees C). The effects of the substrate temperature on the structural and electrical properties of the Bi2Se3 films were studied. The film prepared at room temperature showed a very poor polycrystalline structure with the mainly orthorhombic phase. The crystallinity of the films was improved by heating the substrate during the deposition and the crystal phase of the film changed to the rhombohedral phase as the substrate temperature was higher than 200 degrees C. The stoichiometry of the films and the chemical state of Bi and Se elements in the films were studied by fitting the Se 3d and the Bi 4d5/2 peaks of the X-ray photoelectron spectra. The hexagonal structure was seen clearly for the film prepared at the substrate temperature of 400 degrees C. The surface roughness of the film increased as the substrate temperature was increased. The electrical resistivity of the film decreased from 1 x 10(-3) to 3 x 10(-4) Omega cm as the substrate temperature was increased from room temperature to 400 degrees C. (C) 2011 Elsevier B.V. All rights reserved. |
| Keyword | Pulsed laser deposition Thin films Bismuth selenide X-ray diffraction Electrical properties and measurements Surface morphology Scanning electron microscopy Crystal microstructure |
| Funding Organization | SYNL |
| DOI | 10.1016/j.tsf.2011.04.239 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | SYNL |
| WOS Research Area | Materials Science ; Physics |
| WOS Subject | Materials Science, Multidisciplinary ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter |
| WOS ID | WOS:000295057000002 |
| Publisher | ELSEVIER SCIENCE SA |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/106022 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Meng, Lijian |
| Affiliation | 1.Inst Super Engn Porto, Dept Fis, P-4200072 Oporto, Portugal 2.Univ Minho, Ctr Fis, P-4800058 Guimaraes, Portugal 3.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China |
| Recommended Citation GB/T 7714 | Meng, Lijian,Meng, Hui,Gong, Wenjie,et al. Growth and characterization of Bi2Se3 thin films by pulsed laser deposition using alloy target[J]. THIN SOLID FILMS,2011,519(22):7627-7631. |
| APA | Meng, Lijian,Meng, Hui,Gong, Wenjie,Liu, Wei,&Zhang, Zhidong.(2011).Growth and characterization of Bi2Se3 thin films by pulsed laser deposition using alloy target.THIN SOLID FILMS,519(22),7627-7631. |
| MLA | Meng, Lijian,et al."Growth and characterization of Bi2Se3 thin films by pulsed laser deposition using alloy target".THIN SOLID FILMS 519.22(2011):7627-7631. |
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