Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer

doi:10.1016/j.jcrysgro.2010.10.173

IMR OpenIR

	Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer
	Pan, Xu 1; Wei, Meng 1; Yang, Cuibai 1,2; Xiao, Hongling 1,2; Wang, Cuimei 1,2; Wang, Xiaoliang 1,2
通讯作者	Pan, Xu(xpan@semi.ac.cn)
	2011-03-01
发表期刊	JOURNAL OF CRYSTAL GROWTH
ISSN	0022-0248
卷号	318 期号:1 页码:464-467
摘要	A single high temperature AlN (HT-AlN) buffer has been used to relieve the stress in the growth of GaN epilayers on Si (1 1 1) substrates, but the growth of crack-free GaN on Si is still difficult due to the large mismatch of the lattice and coefficient of thermal-expansion (CTE) between GaN and Si. In this paper, we report the growth of 1.2 mu m thick crack-free GaN epilayers on 2 in. Si (1 1 1) substrates using the AlN sandwich structure as a buffer. The surface morphologies of the samples were observed using a microscope and AFM. Further analysis shows that the crack-free sample is closely correlated to the introduction of the AlN sandwich structure as the buffer. To better understand the relationship between the cracks and the stress, Raman scattering has been used to study the stress in the samples. The results indicate that the sandwich structure with top AlN and bottom AlN can more effectively accommodate the strain energy caused by CTE mismatch stress. (C) 2010 Elsevier B.V. All rights reserved.
关键词	Sandwich structure Stress Aluminum nitride Gallium nitride Silicon
DOI	10.1016/j.jcrysgro.2010.10.173
收录类别	SCI
语种	英语
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000289653900097
出版者	ELSEVIER SCIENCE BV
引用统计	被引频次：20[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/106112
专题	中国科学院金属研究所
通讯作者	Pan, Xu
作者单位	1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100864, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100864, Peoples R China
推荐引用方式 GB/T 7714	Pan, Xu,Wei, Meng,Yang, Cuibai,et al. Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer[J]. JOURNAL OF CRYSTAL GROWTH,2011,318(1):464-467.
APA	Pan, Xu,Wei, Meng,Yang, Cuibai,Xiao, Hongling,Wang, Cuimei,&Wang, Xiaoliang.(2011).Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer.JOURNAL OF CRYSTAL GROWTH,318(1),464-467.
MLA	Pan, Xu,et al."Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer".JOURNAL OF CRYSTAL GROWTH 318.1(2011):464-467.