| Behavioural investigation of InN nanodots by surface topographies and phase images | |
| Deng, Qingwen1; Wang, Xiaoliang1,2,3; Xiao, Hongling1,2; Wang, Cuimei1,2; Yin, Haibo1,2; Chen, Hong1,2; Lin, Defeng1; Li, Jinmin1,2,3; Wang, Zhanguo2; Hou, Xun3 | |
| Corresponding Author | Deng, Qingwen(daven@semi.ac.cn) |
| 2011-11-09 | |
| Source Publication | JOURNAL OF PHYSICS D-APPLIED PHYSICS
 |
| ISSN | 0022-3727 |
| Volume | 44Issue:44Pages:6 |
| Abstract | We employ surface topographies and phase images to investigate InN nanodots. The samples are annealed at 450, 500 and 550 square. The results reveal that the statistical distributions of number density and mean size depend on annealing ambient. The behaviours of thermal annealing between InN films and InN nanodots are distinguishable: the alloying process of InN and GaN not only occurs in InN platelets, but also in InN nanodots once the samples are annealed at the growth temperature of InN nanodots, while the main change in InN films is the decomposition of InN into In droplets and N-2. |
| Funding Organization | Knowledge Innovation Engineering of the Chinese Academy of Sciences ; National Nature Sciences Foundation of China ; State Key Development Program for Basic Research of China ; Chinese Academy of Sciences |
| DOI | 10.1088/0022-3727/44/44/445306 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | Knowledge Innovation Engineering of the Chinese Academy of Sciences[YYYJ-0701-02] ; National Nature Sciences Foundation of China[60890193] ; National Nature Sciences Foundation of China[60906006] ; State Key Development Program for Basic Research of China[2006CB604905] ; State Key Development Program for Basic Research of China[2010CB327503] ; Chinese Academy of Sciences[ISCAS2008T01] ; Chinese Academy of Sciences[ISCAS2009L01] ; Chinese Academy of Sciences[ISCAS2009L02] |
| WOS Research Area | Physics |
| WOS Subject | Physics, Applied |
| WOS ID | WOS:000296591600014 |
| Publisher | IOP PUBLISHING LTD |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/106619 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Deng, Qingwen |
| Affiliation | 1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 3.ISCAS XJTU Joint Lab Funct Mat & Devices Informat, Beijing 100083, Peoples R China |
| Recommended Citation GB/T 7714 | Deng, Qingwen,Wang, Xiaoliang,Xiao, Hongling,et al. Behavioural investigation of InN nanodots by surface topographies and phase images[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2011,44(44):6. |
| APA | Deng, Qingwen.,Wang, Xiaoliang.,Xiao, Hongling.,Wang, Cuimei.,Yin, Haibo.,...&Hou, Xun.(2011).Behavioural investigation of InN nanodots by surface topographies and phase images.JOURNAL OF PHYSICS D-APPLIED PHYSICS,44(44),6. |
| MLA | Deng, Qingwen,et al."Behavioural investigation of InN nanodots by surface topographies and phase images".JOURNAL OF PHYSICS D-APPLIED PHYSICS 44.44(2011):6. |
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