Tin Whisker Growth on NdSn3 Powder

doi:10.1007/s11664-011-1701-2

IMR OpenIR

	Tin Whisker Growth on NdSn3 Powder
	Shi, Hong-Chang; Xian, Ai-Ping
通讯作者	Shi, Hong-Chang()
	2011-09-01
发表期刊	JOURNAL OF ELECTRONIC MATERIALS
ISSN	0361-5235
卷号	40 期号:9 页码:1962-1966
摘要	Tin whiskers grew rapidly and spontaneously on NdSn3 powder under atmospheric conditions. By in situ optical microscopy observation, the incubation period of whisker growth was found to be very short, only about 10 min to 30 min, and the whisker growth rate was very high (up to 73 angstrom/s). It is proposed that the strong tendency for whisker growth on NdSn3 powder indicates that such growth is closely related to decomposition of NdSn3 under atmospheric conditions. An electron beam irradiation effect on whisker growth was also observed, in which the whiskers cease to grow after observation by scanning electron microscopy (SEM).
关键词	Tin whiskers rare earth intermetallic compounds Sn NdSn3
资助者	National Science Foundation of China
DOI	10.1007/s11664-011-1701-2
收录类别	SCI
语种	英语
资助项目	National Science Foundation of China[50871119]
WOS研究方向	Engineering ; Materials Science ; Physics
WOS类目	Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000294070000012
出版者	SPRINGER
引用统计	被引频次：4[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/106780
专题	中国科学院金属研究所
通讯作者	Shi, Hong-Chang
作者单位	Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China
推荐引用方式 GB/T 7714	Shi, Hong-Chang,Xian, Ai-Ping. Tin Whisker Growth on NdSn3 Powder[J]. JOURNAL OF ELECTRONIC MATERIALS,2011,40(9):1962-1966.
APA	Shi, Hong-Chang,&Xian, Ai-Ping.(2011).Tin Whisker Growth on NdSn3 Powder.JOURNAL OF ELECTRONIC MATERIALS,40(9),1962-1966.
MLA	Shi, Hong-Chang,et al."Tin Whisker Growth on NdSn3 Powder".JOURNAL OF ELECTRONIC MATERIALS 40.9(2011):1962-1966.