EPR g factors and tetragonal distortion for the isoelectronic Ni+ and Cu2+ centers in the CuGaSe2 crystal | |
Feng, W. L.1,3,5; Li, X. M.1; Zheng, W. C.2,5; Yang, Y. G.2; Yang, W. Q.4 | |
通讯作者 | Feng, W. L.(wenlinfeng@126.com) |
2011-03-01 | |
发表期刊 | JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
![]() |
ISSN | 0304-8853 |
卷号 | 323期号:5页码:528-531 |
摘要 | The EPR g factors, g(parallel to) and g(perpendicular to), for the isoelectronic 3d(9) ions Ni+ and Cu2+ at the tetragonal Cu+ site of the CuGaSe2 crystal are calculated from the high-order perturbation formulas based on a two-spin-orbit-parameter model. In the model, both the contributions to g factors from the spin-orbit parameter of central 3d(9) ion and that of ligand ion are contained. The calculated results appear to be consistent with the experimental values. The tetragonal distortions (characterized by theta - theta(0), where theta is the angle between the metal-ligand bond and C-4 axis, and theta(0)approximate to E54.74 degrees is the same angle in cubic symmetry) of Ni+ and Cu2+ centers, which are different from the corresponding angle in the host CuGaSe2 crystal and from impurity to impurity, are obtained from the calculations. The difference of the sign of g(parallel to) - g(perpendicular to) between the isoelectronic Ni+ and Cu2+ centers is found to be due to the different tetragonal distortions of both centers in the CuGaSe2 crystal. (C) 2010 Elsevier B.V. All rights reserved. |
关键词 | Electron paramagnetic resonance Crystal- and ligand-field theory Defect structure Ni+ Cu2+ CuGaSe2 |
资助者 | National Science Foundation for Post-doctoral Scientists of China ; Natural Science Foundation from the Education Commission of Chongqing, China |
DOI | 10.1016/j.jmmm.2010.10.003 |
收录类别 | SCI |
语种 | 英语 |
资助项目 | National Science Foundation for Post-doctoral Scientists of China[20100470810] ; Natural Science Foundation from the Education Commission of Chongqing, China[KJ090608] |
WOS研究方向 | Materials Science ; Physics |
WOS类目 | Materials Science, Multidisciplinary ; Physics, Condensed Matter |
WOS记录号 | WOS:000284626800028 |
出版者 | ELSEVIER SCIENCE BV |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.imr.ac.cn/handle/321006/107022 |
专题 | 中国科学院金属研究所 |
通讯作者 | Feng, W. L. |
作者单位 | 1.Chongqing Univ, Coll Optoelect Engn, Minist Educ, Key Lab Optoelect Technol & Syst, Chongqing 400044, Peoples R China 2.Sichuan Univ, Dept Mat Sci, Chengdu 610064, Peoples R China 3.Chongqing Univ Technol, Dept Appl Phys, Chongqing 400054, Peoples R China 4.Chengdu Univ Informat & Technol, Dept Opt & Elect, Chengdu 610225, Peoples R China 5.Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110016, Peoples R China |
推荐引用方式 GB/T 7714 | Feng, W. L.,Li, X. M.,Zheng, W. C.,et al. EPR g factors and tetragonal distortion for the isoelectronic Ni+ and Cu2+ centers in the CuGaSe2 crystal[J]. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS,2011,323(5):528-531. |
APA | Feng, W. L.,Li, X. M.,Zheng, W. C.,Yang, Y. G.,&Yang, W. Q..(2011).EPR g factors and tetragonal distortion for the isoelectronic Ni+ and Cu2+ centers in the CuGaSe2 crystal.JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS,323(5),528-531. |
MLA | Feng, W. L.,et al."EPR g factors and tetragonal distortion for the isoelectronic Ni+ and Cu2+ centers in the CuGaSe2 crystal".JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS 323.5(2011):528-531. |
条目包含的文件 | 条目无相关文件。 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论