IMR OpenIR
Low-temperature growth properties of Si1-xGex by disilane and solid-Ge molecular beam epitaxy
Liu, JP; Kong, MY; Li, JP; Liu, XF; Huang, DD; Sun, DZ
Corresponding AuthorLiu, JP(liujp@red.semi.ac.cn)
1998-10-01
Source PublicationJOURNAL OF CRYSTAL GROWTH
ISSN0022-0248
Volume193Issue:4Pages:535-540
AbstractLow temperature (similar to 500 degrees C) growth properties of Si1-xGex by disilane and solid-Ge molecular beam epitaxy have been studied with an emphasis on surface morphology and growth kinetics. It is found that low-temperature growth(<500 degrees C) is in layer-by-layer mode and atomically-smooth surfaces have been obtained in as-grown samples with large Ge composition (>0.5). Ge composition dependence on substrate temperature, Ge cell temperature and disilane flow rate have been investigated. It is found that in low-temperature growth (less than or equal to 500 degrees C) and under large disilane flux, Ge composition increases with the increase of Ge flux and further increase of Ge flux leads to the saturation of Ge composition. Similar compositional dependence has been found at different growth temperatures. The saturated composition increases with the decrease of substrate temperature. The results can be explained if H desorption is assumed to occur from both Si and Ge monohydrides without diffusional exchange and the presence of Ge enhances H desorption on a Si site. (C) 1998 Elsevier Science B.V. All rights reserved.
KeywordSi1-xGex alloys low temperature epitaxy desorption adsorption surface morphology growth kinetics
Indexed BySCI
Language英语
WOS Research AreaCrystallography ; Materials Science ; Physics
WOS SubjectCrystallography ; Materials Science, Multidisciplinary ; Physics, Applied
WOS IDWOS:000076725000013
PublisherELSEVIER SCIENCE BV
Citation statistics
Cited Times:5[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/107908
Collection中国科学院金属研究所
Corresponding AuthorLiu, JP
AffiliationChinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
Recommended Citation
GB/T 7714
Liu, JP,Kong, MY,Li, JP,et al. Low-temperature growth properties of Si1-xGex by disilane and solid-Ge molecular beam epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,1998,193(4):535-540.
APA Liu, JP,Kong, MY,Li, JP,Liu, XF,Huang, DD,&Sun, DZ.(1998).Low-temperature growth properties of Si1-xGex by disilane and solid-Ge molecular beam epitaxy.JOURNAL OF CRYSTAL GROWTH,193(4),535-540.
MLA Liu, JP,et al."Low-temperature growth properties of Si1-xGex by disilane and solid-Ge molecular beam epitaxy".JOURNAL OF CRYSTAL GROWTH 193.4(1998):535-540.
Files in This Item:
There are no files associated with this item.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Liu, JP]'s Articles
[Kong, MY]'s Articles
[Li, JP]'s Articles
Baidu academic
Similar articles in Baidu academic
[Liu, JP]'s Articles
[Kong, MY]'s Articles
[Li, JP]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Liu, JP]'s Articles
[Kong, MY]'s Articles
[Li, JP]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.