IMR OpenIR
Photoluminescence properties of SiGe/Si single wells with fluctuating structural parameters
Liu, JP; Kong, MY; Si, JJ; Huang, DD; Li, JP; Sun, DZ
Corresponding AuthorLiu, JP()
1998-12-07
Source PublicationJOURNAL OF PHYSICS D-APPLIED PHYSICS
ISSN0022-3727
Volume31Issue:23Pages:L85-L87
AbstractPhotoluminescence properties of SiGe/Si single wells with fluctuating structural parameters are studied. Four SiGe/Si single wells have been grown on Si(001) at 750 degrees C by disilane and solid Ge molecular beam epitaxy with varied disilane cracking-temperatures. Intense NP and TO-phonon replicas are detected up to 70 K in the photoluminescence spectra and the activation energy of the thermal quenching of the photoluminescence is 28 +/- 4 meV. The high growth temperature and purposeful introduction of fluctuation of structural parameters may be responsible for the improvement of the thermal quenching property.
Indexed BySCI
Language英语
WOS Research AreaPhysics
WOS SubjectPhysics, Applied
WOS IDWOS:000077552800003
PublisherIOP PUBLISHING LTD
Citation statistics
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/108287
Collection中国科学院金属研究所
Corresponding AuthorLiu, JP
AffiliationChinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
Recommended Citation
GB/T 7714
Liu, JP,Kong, MY,Si, JJ,et al. Photoluminescence properties of SiGe/Si single wells with fluctuating structural parameters[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,1998,31(23):L85-L87.
APA Liu, JP,Kong, MY,Si, JJ,Huang, DD,Li, JP,&Sun, DZ.(1998).Photoluminescence properties of SiGe/Si single wells with fluctuating structural parameters.JOURNAL OF PHYSICS D-APPLIED PHYSICS,31(23),L85-L87.
MLA Liu, JP,et al."Photoluminescence properties of SiGe/Si single wells with fluctuating structural parameters".JOURNAL OF PHYSICS D-APPLIED PHYSICS 31.23(1998):L85-L87.
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