| Photoluminescence properties of SiGe/Si single wells with fluctuating structural parameters | |
| Liu, JP; Kong, MY; Si, JJ; Huang, DD; Li, JP; Sun, DZ | |
| Corresponding Author | Liu, JP() |
| 1998-12-07 | |
| Source Publication | JOURNAL OF PHYSICS D-APPLIED PHYSICS
 |
| ISSN | 0022-3727 |
| Volume | 31Issue:23Pages:L85-L87 |
| Abstract | Photoluminescence properties of SiGe/Si single wells with fluctuating structural parameters are studied. Four SiGe/Si single wells have been grown on Si(001) at 750 degrees C by disilane and solid Ge molecular beam epitaxy with varied disilane cracking-temperatures. Intense NP and TO-phonon replicas are detected up to 70 K in the photoluminescence spectra and the activation energy of the thermal quenching of the photoluminescence is 28 +/- 4 meV. The high growth temperature and purposeful introduction of fluctuation of structural parameters may be responsible for the improvement of the thermal quenching property. |
| Indexed By | SCI |
| Language | 英语 |
| WOS Research Area | Physics |
| WOS Subject | Physics, Applied |
| WOS ID | WOS:000077552800003 |
| Publisher | IOP PUBLISHING LTD |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/108287 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Liu, JP |
| Affiliation | Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China |
| Recommended Citation GB/T 7714 | Liu, JP,Kong, MY,Si, JJ,et al. Photoluminescence properties of SiGe/Si single wells with fluctuating structural parameters[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,1998,31(23):L85-L87. |
| APA | Liu, JP,Kong, MY,Si, JJ,Huang, DD,Li, JP,&Sun, DZ.(1998).Photoluminescence properties of SiGe/Si single wells with fluctuating structural parameters.JOURNAL OF PHYSICS D-APPLIED PHYSICS,31(23),L85-L87. |
| MLA | Liu, JP,et al."Photoluminescence properties of SiGe/Si single wells with fluctuating structural parameters".JOURNAL OF PHYSICS D-APPLIED PHYSICS 31.23(1998):L85-L87. |
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