| Photoluminescence properties of SiGe/Si single wells with fluctuating structural parameters |
| Liu, JP; Kong, MY; Si, JJ; Huang, DD; Li, JP; Sun, DZ
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| 通讯作者 | Liu, JP()
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| 1998-12-07
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| 发表期刊 | JOURNAL OF PHYSICS D-APPLIED PHYSICS
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| ISSN | 0022-3727
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| 卷号 | 31期号:23页码:L85-L87 |
| 摘要 | Photoluminescence properties of SiGe/Si single wells with fluctuating structural parameters are studied. Four SiGe/Si single wells have been grown on Si(001) at 750 degrees C by disilane and solid Ge molecular beam epitaxy with varied disilane cracking-temperatures. Intense NP and TO-phonon replicas are detected up to 70 K in the photoluminescence spectra and the activation energy of the thermal quenching of the photoluminescence is 28 +/- 4 meV. The high growth temperature and purposeful introduction of fluctuation of structural parameters may be responsible for the improvement of the thermal quenching property. |
| 收录类别 | SCI
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| 语种 | 英语
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| WOS研究方向 | Physics
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| WOS类目 | Physics, Applied
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| WOS记录号 | WOS:000077552800003
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| 出版者 | IOP PUBLISHING LTD
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| 引用统计 |
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| 文献类型 | 期刊论文
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| 条目标识符 | http://ir.imr.ac.cn/handle/321006/108287
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| 专题 | 中国科学院金属研究所
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| 通讯作者 | Liu, JP |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
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推荐引用方式
GB/T 7714 |
Liu, JP,Kong, MY,Si, JJ,et al. Photoluminescence properties of SiGe/Si single wells with fluctuating structural parameters[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,1998,31(23):L85-L87.
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| APA |
Liu, JP,Kong, MY,Si, JJ,Huang, DD,Li, JP,&Sun, DZ.(1998).Photoluminescence properties of SiGe/Si single wells with fluctuating structural parameters.JOURNAL OF PHYSICS D-APPLIED PHYSICS,31(23),L85-L87.
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| MLA |
Liu, JP,et al."Photoluminescence properties of SiGe/Si single wells with fluctuating structural parameters".JOURNAL OF PHYSICS D-APPLIED PHYSICS 31.23(1998):L85-L87.
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