Structural characterization of SiGe/Si single wells grown by disilane and solid-Ge molecular beam epitaxy with varied disilane cracking temperature

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	Structural characterization of SiGe/Si single wells grown by disilane and solid-Ge molecular beam epitaxy with varied disilane cracking temperature
	Liu, JP; Kong, MY; Huang, DD; Li, JP; Sun, DZ
通讯作者	Liu, JP()
	1998-12-01
发表期刊	JOURNAL OF CRYSTAL GROWTH
ISSN	0022-0248
卷号	194 期号:3-4 页码:426-429
摘要	Structural properties of SiGe/Si single wells are studied by double-crystal X-ray diffraction. Four SiGe/Si single wells have been grown on Si (0 0 1) at 750 degrees C by disilane and solid-Ge molecular beam epitaxy with varied disilane cracking temperature. Using dynamic theory, together with kinematic theory and the specific growth procedure adopted, structural parameters in the multilayer structure are determined precisely. The results are compared with those obtained from PL and XTEM as well as AES measurements. It is found that disilane adsorption is dependent on cracking temperature as well as Ge incorporation. Disilane adsorption is increased by cracking disilane while it decreased with Ge incorporation (C) 1998 Elsevier Science B.V. All rights reserved. PACS: 61.10.Eq; 68.65.+g; 71.55.+g; 81.15.Hi.
关键词	X-ray diffraction SiGe/Si disilane cracking dynamic simulation
收录类别	SCI
语种	英语
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000077280400019
出版者	ELSEVIER SCIENCE BV
引用统计
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/108624
专题	中国科学院金属研究所
通讯作者	Liu, JP
作者单位	Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Liu, JP,Kong, MY,Huang, DD,et al. Structural characterization of SiGe/Si single wells grown by disilane and solid-Ge molecular beam epitaxy with varied disilane cracking temperature[J]. JOURNAL OF CRYSTAL GROWTH,1998,194(3-4):426-429.
APA	Liu, JP,Kong, MY,Huang, DD,Li, JP,&Sun, DZ.(1998).Structural characterization of SiGe/Si single wells grown by disilane and solid-Ge molecular beam epitaxy with varied disilane cracking temperature.JOURNAL OF CRYSTAL GROWTH,194(3-4),426-429.
MLA	Liu, JP,et al."Structural characterization of SiGe/Si single wells grown by disilane and solid-Ge molecular beam epitaxy with varied disilane cracking temperature".JOURNAL OF CRYSTAL GROWTH 194.3-4(1998):426-429.