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Structural characterization of SiGe/Si single wells grown by disilane and solid-Ge molecular beam epitaxy with varied disilane cracking temperature
Liu, JP; Kong, MY; Huang, DD; Li, JP; Sun, DZ
Corresponding AuthorLiu, JP()
1998-12-01
Source PublicationJOURNAL OF CRYSTAL GROWTH
ISSN0022-0248
Volume194Issue:3-4Pages:426-429
AbstractStructural properties of SiGe/Si single wells are studied by double-crystal X-ray diffraction. Four SiGe/Si single wells have been grown on Si (0 0 1) at 750 degrees C by disilane and solid-Ge molecular beam epitaxy with varied disilane cracking temperature. Using dynamic theory, together with kinematic theory and the specific growth procedure adopted, structural parameters in the multilayer structure are determined precisely. The results are compared with those obtained from PL and XTEM as well as AES measurements. It is found that disilane adsorption is dependent on cracking temperature as well as Ge incorporation. Disilane adsorption is increased by cracking disilane while it decreased with Ge incorporation (C) 1998 Elsevier Science B.V. All rights reserved. PACS: 61.10.Eq; 68.65.+g; 71.55.+g; 81.15.Hi.
KeywordX-ray diffraction SiGe/Si disilane cracking dynamic simulation
Indexed BySCI
Language英语
WOS Research AreaCrystallography ; Materials Science ; Physics
WOS SubjectCrystallography ; Materials Science, Multidisciplinary ; Physics, Applied
WOS IDWOS:000077280400019
PublisherELSEVIER SCIENCE BV
Citation statistics
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/108624
Collection中国科学院金属研究所
Corresponding AuthorLiu, JP
AffiliationChinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
Recommended Citation
GB/T 7714
Liu, JP,Kong, MY,Huang, DD,et al. Structural characterization of SiGe/Si single wells grown by disilane and solid-Ge molecular beam epitaxy with varied disilane cracking temperature[J]. JOURNAL OF CRYSTAL GROWTH,1998,194(3-4):426-429.
APA Liu, JP,Kong, MY,Huang, DD,Li, JP,&Sun, DZ.(1998).Structural characterization of SiGe/Si single wells grown by disilane and solid-Ge molecular beam epitaxy with varied disilane cracking temperature.JOURNAL OF CRYSTAL GROWTH,194(3-4),426-429.
MLA Liu, JP,et al."Structural characterization of SiGe/Si single wells grown by disilane and solid-Ge molecular beam epitaxy with varied disilane cracking temperature".JOURNAL OF CRYSTAL GROWTH 194.3-4(1998):426-429.
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