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Cross-sectional electron microscopy observation on the amorphized indentation region in [001] single-crystal silicon
Wu, YQ; Yang, XY; Xu, YB
Corresponding AuthorXu, YB()
1999-06-22
Source PublicationACTA MATERIALIA
ISSN1359-6454
Volume47Issue:8Pages:2431-2436
AbstractThe amorphized region of single-crystal silicon (c-Si) induced by Vickers indentation has been studied cross-sectionally by transmission electron microscopy (TEM) and high-resolution electron microscopy (HREM). A comparison between the V-shaped profile of the amorphous region and the stress isobars under the indenter shows that the deviatoric stress plays a significant role in the formation of amorphous silicon (a-Si). A number of defects near the crystalline/amorphous (cla) interface, and the refinement and rotation of grains at local regions, are observed by HREM. The distortion of lattice fringes in the c-Si region and the domains characterized by distorted lattice in the a-Si region near the interface as well as continuous transition from the crystalline to the amorphous region at the interface are also observed. A possible mechanism of defect-induced or heavy-deformation-induced amorphization of silicon under indentation is suggested. (C) 1999 Acta Metallurgica Inc. Published by Elsevier Science Ltd. All rights reserved.
Indexed BySCI
Language英语
WOS Research AreaMaterials Science ; Metallurgy & Metallurgical Engineering
WOS SubjectMaterials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS IDWOS:000081439600012
PublisherPERGAMON-ELSEVIER SCIENCE LTD
Citation statistics
Cited Times:50[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/108773
Collection中国科学院金属研究所
Corresponding AuthorXu, YB
Affiliation1.Chinese Acad Sci, Inst Met Res, State Key Lab Fatigue & Fracture Mat, Shenyang 110015, Peoples R China
2.Chinese Acad Sci, Inst Met Res, Atom Imaging Solids Lab, Shenyang 110015, Peoples R China
Recommended Citation
GB/T 7714
Wu, YQ,Yang, XY,Xu, YB. Cross-sectional electron microscopy observation on the amorphized indentation region in [001] single-crystal silicon[J]. ACTA MATERIALIA,1999,47(8):2431-2436.
APA Wu, YQ,Yang, XY,&Xu, YB.(1999).Cross-sectional electron microscopy observation on the amorphized indentation region in [001] single-crystal silicon.ACTA MATERIALIA,47(8),2431-2436.
MLA Wu, YQ,et al."Cross-sectional electron microscopy observation on the amorphized indentation region in [001] single-crystal silicon".ACTA MATERIALIA 47.8(1999):2431-2436.
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