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Cross-sectional observation on the indentation of [001] silicon
Wu, YQ; Shi, GY; Xu, YB
Corresponding AuthorWu, YQ()
1999-06-01
Source PublicationJOURNAL OF MATERIALS RESEARCH
ISSN0884-2914
Volume14Issue:6Pages:2399-2401
AbstractA transmission electron microscope (TEM) micrograph of cross-sectionally viewed Vickers indentation made on the surface of (001) silicon at ambient temperature was obtained. The picture clearly reveals a triangle area, pointing downward and having nondiffraction-contrast, left after unloading, which further confirms the amorphized range induced by indentation in silicon, Analysis of the picture directly manifests a significant recovery of indentation depth. Surface shape and range of the amorphous silicon region do nor coincide with that of the indenter and the corresponding distribution pattern of hydrostatic stress beneath indentation predicted by elastoplastic theory, respectively. It seems that the amorphization could not be attributed to the result of hydrostatic stress alone.
Indexed BySCI
Language英语
WOS Research AreaMaterials Science
WOS SubjectMaterials Science, Multidisciplinary
WOS IDWOS:000082550600029
PublisherMATERIALS RESEARCH SOCIETY
Citation statistics
Cited Times:11[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/109069
Collection中国科学院金属研究所
Corresponding AuthorWu, YQ
Affiliation1.Chinese Acad Sci, State Key Lab Fatigue & Fracture Mat, Met Res Inst, Shenyang 110015, Peoples R China
2.Chinese Acad Sci, Atom Imaging Solids Lab, Met Res Inst, Shenyang 110015, Peoples R China
3.Liaoning Univ, Dept Elect Sci & Engn, Shenyang 110036, Peoples R China
Recommended Citation
GB/T 7714
Wu, YQ,Shi, GY,Xu, YB. Cross-sectional observation on the indentation of [001] silicon[J]. JOURNAL OF MATERIALS RESEARCH,1999,14(6):2399-2401.
APA Wu, YQ,Shi, GY,&Xu, YB.(1999).Cross-sectional observation on the indentation of [001] silicon.JOURNAL OF MATERIALS RESEARCH,14(6),2399-2401.
MLA Wu, YQ,et al."Cross-sectional observation on the indentation of [001] silicon".JOURNAL OF MATERIALS RESEARCH 14.6(1999):2399-2401.
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