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Effect of Si overgrowth on the structural and luminescence properties of Ge islands on Si(100)
Liu, JP; Wang, JZ; Huang, DD; Li, JP; Sun, DZ; Kong, MY
Corresponding AuthorLiu, JP()
1999-11-01
Source PublicationJOURNAL OF CRYSTAL GROWTH
ISSN0022-0248
Volume207Issue:1-2Pages:150-153
AbstractThe effect of Si overgrowth on the structural and luminescence properties of strained Ge layer grown on Si(1 0 0) is studied. Capping Si leads to the dissolution of Ge island apex and reduced island height. The structural changes in island shape, especially in chemical composition during Si overgrowth have a large effect on the PL properties. The integrated PL intensity of Ge layer increases and there are large blue shifts in peak energies after capping Si. The PL spectra from buried Ge layer are consistent with type-II band alignment in SiGe/Si. We show that the PL properties from buried Ge layer may be tailored by modifying the cap layer growth conditions as well as post-growth annealing. (C) 1999 Elsevier Science B.V. All rights reserved.
Indexed BySCI
Language英语
WOS Research AreaCrystallography ; Materials Science ; Physics
WOS SubjectCrystallography ; Materials Science, Multidisciplinary ; Physics, Applied
WOS IDWOS:000083594900022
PublisherELSEVIER SCIENCE BV
Citation statistics
Cited Times:10[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/109313
Collection中国科学院金属研究所
Corresponding AuthorLiu, JP
AffiliationChinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
Recommended Citation
GB/T 7714
Liu, JP,Wang, JZ,Huang, DD,et al. Effect of Si overgrowth on the structural and luminescence properties of Ge islands on Si(100)[J]. JOURNAL OF CRYSTAL GROWTH,1999,207(1-2):150-153.
APA Liu, JP,Wang, JZ,Huang, DD,Li, JP,Sun, DZ,&Kong, MY.(1999).Effect of Si overgrowth on the structural and luminescence properties of Ge islands on Si(100).JOURNAL OF CRYSTAL GROWTH,207(1-2),150-153.
MLA Liu, JP,et al."Effect of Si overgrowth on the structural and luminescence properties of Ge islands on Si(100)".JOURNAL OF CRYSTAL GROWTH 207.1-2(1999):150-153.
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