Effect of Si overgrowth on the structural and luminescence properties of Ge islands on Si(100)

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	Effect of Si overgrowth on the structural and luminescence properties of Ge islands on Si(100)
	Liu, JP; Wang, JZ; Huang, DD; Li, JP; Sun, DZ; Kong, MY
通讯作者	Liu, JP()
	1999-11-01
发表期刊	JOURNAL OF CRYSTAL GROWTH
ISSN	0022-0248
卷号	207 期号:1-2 页码:150-153
摘要	The effect of Si overgrowth on the structural and luminescence properties of strained Ge layer grown on Si(1 0 0) is studied. Capping Si leads to the dissolution of Ge island apex and reduced island height. The structural changes in island shape, especially in chemical composition during Si overgrowth have a large effect on the PL properties. The integrated PL intensity of Ge layer increases and there are large blue shifts in peak energies after capping Si. The PL spectra from buried Ge layer are consistent with type-II band alignment in SiGe/Si. We show that the PL properties from buried Ge layer may be tailored by modifying the cap layer growth conditions as well as post-growth annealing. (C) 1999 Elsevier Science B.V. All rights reserved.
收录类别	SCI
语种	英语
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000083594900022
出版者	ELSEVIER SCIENCE BV
引用统计	被引频次：10[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/109313
专题	中国科学院金属研究所
通讯作者	Liu, JP
作者单位	Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Liu, JP,Wang, JZ,Huang, DD,et al. Effect of Si overgrowth on the structural and luminescence properties of Ge islands on Si(100)[J]. JOURNAL OF CRYSTAL GROWTH,1999,207(1-2):150-153.
APA	Liu, JP,Wang, JZ,Huang, DD,Li, JP,Sun, DZ,&Kong, MY.(1999).Effect of Si overgrowth on the structural and luminescence properties of Ge islands on Si(100).JOURNAL OF CRYSTAL GROWTH,207(1-2),150-153.
MLA	Liu, JP,et al."Effect of Si overgrowth on the structural and luminescence properties of Ge islands on Si(100)".JOURNAL OF CRYSTAL GROWTH 207.1-2(1999):150-153.