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Lattice-distortion-induced amorphization in indented [110] silicon
Wu, YQ; Xu, YB
Corresponding AuthorWu, YQ()
1999-03-01
Source PublicationJOURNAL OF MATERIALS RESEARCH
ISSN0884-2914
Volume14Issue:3Pages:682-687
AbstractHigh resolution transmission electron microscopy (HRTEM) is used to reveal fine structures of amorphous silicon induced by Vickers indentation and its interface with unindented silicon matrix. Deformation microtwins at the interface and continuous transition from lattice structure of crystal into amorphous structure at the interface are observed. Within the amorphous silicon near the periphery of the indented region, there are many clusters characterized by distorted silicon lattice. A possible mechanism of lattice-distortion-induced amorphization at the periphery of indented silicon is suggested. All the indentations are performed at ambient temperature.
Indexed BySCI
Language英语
WOS Research AreaMaterials Science
WOS SubjectMaterials Science, Multidisciplinary
WOS IDWOS:000082550300008
PublisherMATERIALS RESEARCH SOCIETY
Citation statistics
Cited Times:23[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/109379
Collection中国科学院金属研究所
Corresponding AuthorWu, YQ
Affiliation1.Acad Sinica, Inst Met Res, State Key Lab Fatigue & Fracture Mat, Shenyang 110015, Peoples R China
2.Acad Sinica, Inst Met Res, Atom Imaging Solids Lab, Shenyang 110015, Peoples R China
Recommended Citation
GB/T 7714
Wu, YQ,Xu, YB. Lattice-distortion-induced amorphization in indented [110] silicon[J]. JOURNAL OF MATERIALS RESEARCH,1999,14(3):682-687.
APA Wu, YQ,&Xu, YB.(1999).Lattice-distortion-induced amorphization in indented [110] silicon.JOURNAL OF MATERIALS RESEARCH,14(3),682-687.
MLA Wu, YQ,et al."Lattice-distortion-induced amorphization in indented [110] silicon".JOURNAL OF MATERIALS RESEARCH 14.3(1999):682-687.
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