| Lattice-distortion-induced amorphization in indented [110] silicon | |
| Wu, YQ; Xu, YB | |
| Corresponding Author | Wu, YQ() |
| 1999-03-01 | |
| Source Publication | JOURNAL OF MATERIALS RESEARCH
 |
| ISSN | 0884-2914 |
| Volume | 14Issue:3Pages:682-687 |
| Abstract | High resolution transmission electron microscopy (HRTEM) is used to reveal fine structures of amorphous silicon induced by Vickers indentation and its interface with unindented silicon matrix. Deformation microtwins at the interface and continuous transition from lattice structure of crystal into amorphous structure at the interface are observed. Within the amorphous silicon near the periphery of the indented region, there are many clusters characterized by distorted silicon lattice. A possible mechanism of lattice-distortion-induced amorphization at the periphery of indented silicon is suggested. All the indentations are performed at ambient temperature. |
| Indexed By | SCI |
| Language | 英语 |
| WOS Research Area | Materials Science |
| WOS Subject | Materials Science, Multidisciplinary |
| WOS ID | WOS:000082550300008 |
| Publisher | MATERIALS RESEARCH SOCIETY |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/109379 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Wu, YQ |
| Affiliation | 1.Acad Sinica, Inst Met Res, State Key Lab Fatigue & Fracture Mat, Shenyang 110015, Peoples R China 2.Acad Sinica, Inst Met Res, Atom Imaging Solids Lab, Shenyang 110015, Peoples R China |
| Recommended Citation GB/T 7714 | Wu, YQ,Xu, YB. Lattice-distortion-induced amorphization in indented [110] silicon[J]. JOURNAL OF MATERIALS RESEARCH,1999,14(3):682-687. |
| APA | Wu, YQ,&Xu, YB.(1999).Lattice-distortion-induced amorphization in indented [110] silicon.JOURNAL OF MATERIALS RESEARCH,14(3),682-687. |
| MLA | Wu, YQ,et al."Lattice-distortion-induced amorphization in indented [110] silicon".JOURNAL OF MATERIALS RESEARCH 14.3(1999):682-687. |
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