Enhanced hydrogen desorption from Si sites during low-temperature Si1-xGex growth by disilane and solid-Ge molecular beam epitaxy

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	Enhanced hydrogen desorption from Si sites during low-temperature Si1-xGex growth by disilane and solid-Ge molecular beam epitaxy
	Liu, JP; Huang, DD; Li, JP; Lin, YX; Sun, DZ; Kong, MY
Corresponding Author	Liu, JP()
	1999-05-01
Source Publication	JOURNAL OF APPLIED PHYSICS
ISSN	0021-8979
Volume	85 Issue:9 Pages:6920-6922
Abstract	A phenomenological model is proposed to explain quantitatively the interesting compositional dependence on the Ge incorporation rate during low-temperature growth of Si1-xGex by disilane and solid-Ge molecular beam epitaxy, based on enhanced hydrogen desorption from Si sites due to the presence of Ge atoms. The hydrogen desorption rate constant for disilane on Si sites is fitted to an exponential function of Ge incorporation rate and a possible physical explanation is discussed. Simulated results are in excellent agreement with experimental data. (C) 1999 American Institute of Physics. [S0021-8979(99)02109-X].
Indexed By	SCI
Language	英语
WOS Research Area	Physics
WOS Subject	Physics, Applied
WOS ID	WOS:000079871200101
Publisher	AMER INST PHYSICS
Citation statistics	Cited Times:1[WOS] [WOS Record] [Related Records in WOS]
Document Type	期刊论文
Identifier	http://ir.imr.ac.cn/handle/321006/109438
Collection	中国科学院金属研究所
Corresponding Author	Liu, JP
Affiliation	Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
Recommended Citation GB/T 7714	Liu, JP,Huang, DD,Li, JP,et al. Enhanced hydrogen desorption from Si sites during low-temperature Si1-xGex growth by disilane and solid-Ge molecular beam epitaxy[J]. JOURNAL OF APPLIED PHYSICS,1999,85(9):6920-6922.
APA	Liu, JP,Huang, DD,Li, JP,Lin, YX,Sun, DZ,&Kong, MY.(1999).Enhanced hydrogen desorption from Si sites during low-temperature Si1-xGex growth by disilane and solid-Ge molecular beam epitaxy.JOURNAL OF APPLIED PHYSICS,85(9),6920-6922.
MLA	Liu, JP,et al."Enhanced hydrogen desorption from Si sites during low-temperature Si1-xGex growth by disilane and solid-Ge molecular beam epitaxy".JOURNAL OF APPLIED PHYSICS 85.9(1999):6920-6922.

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