A molecular dynamics study on the (11(2)over-bar0) domain boundary structures in epitaxial wurtzite GaN

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	A molecular dynamics study on the (11(2)over-bar0) domain boundary structures in epitaxial wurtzite GaN
	Wang, SQ; Wang, YM; Ye, HQ
通讯作者	Wang, SQ()
	1999-07-01
发表期刊	JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
ISSN	1005-0302
卷号	15 期号:4 页码:328-330
摘要	A computer program has been developed for the molecular dynamics calculation of ionic or strong-ionic covalent systems. Ewald summation algorithm and Keating potential model are adopted to calculate the long-range Coulomb interaction and the short-range bonding forces, respectively. A theoretical study on the domain boundary structures in epitaxial wurtzite GaN film is accomplished with the program. The calculation result is used in the structure formation explanation of an interesting defect observed by HREM experiment.
收录类别	SCI
语种	英语
WOS研究方向	Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目	Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS记录号	WOS:000081263400011
出版者	JOURNAL MATER SCI TECHNOL
引用统计
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/109466
专题	中国科学院金属研究所
通讯作者	Wang, SQ
作者单位	Chinese Acad Sci, Atom Imaging Solids Lab, Met Res Inst, Shenyang 110015, Peoples R China
推荐引用方式 GB/T 7714	Wang, SQ,Wang, YM,Ye, HQ. A molecular dynamics study on the (11(2)over-bar0) domain boundary structures in epitaxial wurtzite GaN[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,1999,15(4):328-330.
APA	Wang, SQ,Wang, YM,&Ye, HQ.(1999).A molecular dynamics study on the (11(2)over-bar0) domain boundary structures in epitaxial wurtzite GaN.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,15(4),328-330.
MLA	Wang, SQ,et al."A molecular dynamics study on the (11(2)over-bar0) domain boundary structures in epitaxial wurtzite GaN".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 15.4(1999):328-330.