| A molecular dynamics study on the (11(2)over-bar0) domain boundary structures in epitaxial wurtzite GaN | |
| Wang, SQ; Wang, YM; Ye, HQ | |
| Corresponding Author | Wang, SQ() |
| 1999-07-01 | |
| Source Publication | JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
 |
| ISSN | 1005-0302 |
| Volume | 15Issue:4Pages:328-330 |
| Abstract | A computer program has been developed for the molecular dynamics calculation of ionic or strong-ionic covalent systems. Ewald summation algorithm and Keating potential model are adopted to calculate the long-range Coulomb interaction and the short-range bonding forces, respectively. A theoretical study on the domain boundary structures in epitaxial wurtzite GaN film is accomplished with the program. The calculation result is used in the structure formation explanation of an interesting defect observed by HREM experiment. |
| Indexed By | SCI |
| Language | 英语 |
| WOS Research Area | Materials Science ; Metallurgy & Metallurgical Engineering |
| WOS Subject | Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
| WOS ID | WOS:000081263400011 |
| Publisher | JOURNAL MATER SCI TECHNOL |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/109466 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Wang, SQ |
| Affiliation | Chinese Acad Sci, Atom Imaging Solids Lab, Met Res Inst, Shenyang 110015, Peoples R China |
| Recommended Citation GB/T 7714 | Wang, SQ,Wang, YM,Ye, HQ. A molecular dynamics study on the (11(2)over-bar0) domain boundary structures in epitaxial wurtzite GaN[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,1999,15(4):328-330. |
| APA | Wang, SQ,Wang, YM,&Ye, HQ.(1999).A molecular dynamics study on the (11(2)over-bar0) domain boundary structures in epitaxial wurtzite GaN.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,15(4),328-330. |
| MLA | Wang, SQ,et al."A molecular dynamics study on the (11(2)over-bar0) domain boundary structures in epitaxial wurtzite GaN".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 15.4(1999):328-330. |
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