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Stacking disordering in hexagonal BN induced by shearing under ball milling
Huang, JY; Jia, XB; Yasuda, H; Mori, H
通讯作者Huang, JY()
1999-05-01
发表期刊PHILOSOPHICAL MAGAZINE LETTERS
ISSN0950-0839
卷号79期号:5页码:217-224
摘要Significant stacking-disordering within basal planes, such as heavy stacking faults, basal plane twinning or even entirely disordered stackings and shearing of lattice planes, delamination and kink bands were frequently found in most hexagonal BN (h-BN) grains after milling. It is evident that most of these high-energy defect structures are created by simultaneous shearing rather than by dissociation of a perfect dislocation. As a result of frequent shearing, the unit-cell shape of the [11 (2) over bar 0] lattice image changes from a rectangle to a rhombi. Nonbasal plane defects such as half Frank loops, and interstitial and vacancy loops with high-energy stacking configurations were also frequently found. These deformation structures stem inherently from the structural characteristic of h-BN and are significantly different from those observed in fee metals such as copper.
收录类别SCI
语种英语
WOS研究方向Physics
WOS类目Physics, Condensed Matter
WOS记录号WOS:000080159800002
出版者TAYLOR & FRANCIS LTD
引用统计
被引频次:17[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/110043
专题中国科学院金属研究所
通讯作者Huang, JY
作者单位1.Osaka Univ, Ultra High Voltage Electron Microscopy Res Ctr, Suita, Osaka 565, Japan
2.Chinese Acad Sci, Met Res Inst, Atom Imaging Solids Lab, Shenyang 110015, Peoples R China
3.Natl Res Inst Met, Tsukuba, Ibaraki 305, Japan
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GB/T 7714
Huang, JY,Jia, XB,Yasuda, H,et al. Stacking disordering in hexagonal BN induced by shearing under ball milling[J]. PHILOSOPHICAL MAGAZINE LETTERS,1999,79(5):217-224.
APA Huang, JY,Jia, XB,Yasuda, H,&Mori, H.(1999).Stacking disordering in hexagonal BN induced by shearing under ball milling.PHILOSOPHICAL MAGAZINE LETTERS,79(5),217-224.
MLA Huang, JY,et al."Stacking disordering in hexagonal BN induced by shearing under ball milling".PHILOSOPHICAL MAGAZINE LETTERS 79.5(1999):217-224.
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