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X-ray photoelectron spectroscopy studies of ITO thin films
Chen, M; Pei, ZL; Bai, XD; Huang, RF; Wen, LS
Corresponding AuthorChen, M()
2000-02-01
Source PublicationJOURNAL OF INORGANIC MATERIALS
ISSN1000-324X
Volume15Issue:1Pages:188-192
AbstractThe chemical states of In, Sn and O in Sn-dopcd In2O3 films were investigated by using X-ray photoelectron spectroscopy. The results indicate that Sn and In respectively exist in a same chemical state for both as-deposited and post-annealed films. Two types of O2- ions, O-I and O-II, can be distinguished by Gaussian simulation. OI has a binding energy of 529.90+/-0.30 eV which is in oxygen sufficient region, and O-II has a binding energy of 531.40+/-0.2 eV which is in oxygen deficient regions. Oxygen deficient regions mainly exist in the surface layer.
Keywordchemical state XPS Gaussian simulation
Indexed BySCI
Language英语
WOS Research AreaMaterials Science
WOS SubjectMaterials Science, Ceramics
WOS IDWOS:000086464400034
PublisherSCIENCE PRESS
Citation statistics
Cited Times:3[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/110461
Collection中国科学院金属研究所
Corresponding AuthorChen, M
AffiliationChinese Acad Sci, Inst Met Res, Shenyang 110015, Peoples R China
Recommended Citation
GB/T 7714
Chen, M,Pei, ZL,Bai, XD,et al. X-ray photoelectron spectroscopy studies of ITO thin films[J]. JOURNAL OF INORGANIC MATERIALS,2000,15(1):188-192.
APA Chen, M,Pei, ZL,Bai, XD,Huang, RF,&Wen, LS.(2000).X-ray photoelectron spectroscopy studies of ITO thin films.JOURNAL OF INORGANIC MATERIALS,15(1),188-192.
MLA Chen, M,et al."X-ray photoelectron spectroscopy studies of ITO thin films".JOURNAL OF INORGANIC MATERIALS 15.1(2000):188-192.
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