| The growth of Si/SiGe/Si structures for heterojunction bipolar transistor by gas source molecular beam epitaxy |
| Gao, F; Huang, DD; Li, JP; Lin, YX; Kong, MY; Li, JM; Zeng, YP; Lin, LY
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| 通讯作者 | Gao, F()
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| 2000-12-01
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| 发表期刊 | JOURNAL OF CRYSTAL GROWTH
 |
| ISSN | 0022-0248
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| 卷号 | 220期号:4页码:457-460 |
| 摘要 | Three n-p-n Si/SiGe/Si heterostructures with different layer thickness and doping concentration have been grown by a home-made gas source molecular-beam epitaxy (GSMBE) system using phosphine (PH3) and diborane (B2H6) as n-and p-type in situ doping sources, respectively. Heterojunction bipolar transistors (HBTs) have been fabricated using these structures and a current gain of 40 at 300 K and 62 at 77 K have been obtained. The influence of thickness and doping concentration of the deposited layers on the current gain of the HBTs is discussed. (C) 2000 Elsevier Science B.V. All rights reserved. |
| 关键词 | GSMBE
SiGe alloy
doping
SIMS
HBT
current gain
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| 收录类别 | SCI
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| 语种 | 英语
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| WOS研究方向 | Crystallography
; Materials Science
; Physics
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| WOS类目 | Crystallography
; Materials Science, Multidisciplinary
; Physics, Applied
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| WOS记录号 | WOS:000165957500017
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| 出版者 | ELSEVIER SCIENCE BV
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| 引用统计 |
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| 文献类型 | 期刊论文
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| 条目标识符 | http://ir.imr.ac.cn/handle/321006/110614
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| 专题 | 中国科学院金属研究所
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| 通讯作者 | Gao, F |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
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推荐引用方式
GB/T 7714 |
Gao, F,Huang, DD,Li, JP,et al. The growth of Si/SiGe/Si structures for heterojunction bipolar transistor by gas source molecular beam epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,2000,220(4):457-460.
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| APA |
Gao, F.,Huang, DD.,Li, JP.,Lin, YX.,Kong, MY.,...&Lin, LY.(2000).The growth of Si/SiGe/Si structures for heterojunction bipolar transistor by gas source molecular beam epitaxy.JOURNAL OF CRYSTAL GROWTH,220(4),457-460.
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| MLA |
Gao, F,et al."The growth of Si/SiGe/Si structures for heterojunction bipolar transistor by gas source molecular beam epitaxy".JOURNAL OF CRYSTAL GROWTH 220.4(2000):457-460.
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