Simulation of the influence of the filament arrangement on the gas phase during hot filament chemical vapor deposition of diamond films | |
Song, GH; Sun, C; Huang, RF; Wen, LS | |
Corresponding Author | Wen, LS() |
2000-05-01 | |
Source Publication | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
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ISSN | 0734-2101 |
Volume | 18Issue:3Pages:860-863 |
Abstract | The uniform temperature and mass current density of gas in deposition regions of films were very important to obtain uniform diamond films over a large area during hot filament chemical vapor deposition. The simulation showed that the two physical parameters of gas in the chamber varied as a function of space and were influenced by the arrangement of the filaments and the initial rate of the introduced gas. Regions of uniform temperature and mass current density existed in the chamber. The distributions of temperature and mass current density did not vary with the filament diameter. However, the value of the two physical parameters increased and declined with the increment of the diameter, respectively. An optimum distance between filaments was necessary to obtain uniform films over a large area. The mass current density increased with the initial rate of the introduced gas. These results might provide a basis for optimizing the technological parameters to obtain uniform diamond films over a large area. (C) 2000 American Vacuum Society. [S0734-2101(00)03703-9]. |
Indexed By | SCI |
Language | 英语 |
WOS Research Area | Materials Science ; Physics |
WOS Subject | Materials Science, Coatings & Films ; Physics, Applied |
WOS ID | WOS:000087118000011 |
Publisher | AMER INST PHYSICS |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.imr.ac.cn/handle/321006/111147 |
Collection | 中国科学院金属研究所 |
Corresponding Author | Wen, LS |
Affiliation | 1.Chinese Acad Sci, Met Res Inst, Shenyang 110015, Peoples R China 2.Shenyang Polytech Univ, Dept Mat Engn, Shenyang 110026, Peoples R China |
Recommended Citation GB/T 7714 | Song, GH,Sun, C,Huang, RF,et al. Simulation of the influence of the filament arrangement on the gas phase during hot filament chemical vapor deposition of diamond films[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,2000,18(3):860-863. |
APA | Song, GH,Sun, C,Huang, RF,&Wen, LS.(2000).Simulation of the influence of the filament arrangement on the gas phase during hot filament chemical vapor deposition of diamond films.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,18(3),860-863. |
MLA | Song, GH,et al."Simulation of the influence of the filament arrangement on the gas phase during hot filament chemical vapor deposition of diamond films".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS 18.3(2000):860-863. |
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