| Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy |
| Gao, F; Huang, DD; Li, JP; Lin, YX; Kong, MY; Sun, DZ; Li, JM; Lin, LY
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| 通讯作者 | Gao, F()
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| 2000-12-01
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| 发表期刊 | JOURNAL OF CRYSTAL GROWTH
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| ISSN | 0022-0248
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| 卷号 | 220期号:4页码:461-465 |
| 摘要 | As reported by other authors, we have also observed that the Si growth rate decreases with increasing phosphine (PH3) flow rate in gas source-Si molecular beam epitaxy using phosphorous (P) as a n-type dopant. Why small quantity PH3 can affect Si growth rate? Up to now, the quantitative characterization of PH3 flow influence on Si growth rate is little known. In this letter, the PH, influence will be analyzed in detail and a model considering strong P surface segregation and its absorption of hydrogen will be proposed to characterize the effect. (C) 2000 Elsevier Science B.V. All rights reserved. |
| 关键词 | Si growth rate
P doping
PH3 flow rate
P segregation
GSMBE
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| 收录类别 | SCI
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| 语种 | 英语
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| WOS研究方向 | Crystallography
; Materials Science
; Physics
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| WOS类目 | Crystallography
; Materials Science, Multidisciplinary
; Physics, Applied
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| WOS记录号 | WOS:000165957500018
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| 出版者 | ELSEVIER SCIENCE BV
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| 引用统计 |
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| 文献类型 | 期刊论文
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| 条目标识符 | http://ir.imr.ac.cn/handle/321006/111343
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| 专题 | 中国科学院金属研究所
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| 通讯作者 | Gao, F |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
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推荐引用方式
GB/T 7714 |
Gao, F,Huang, DD,Li, JP,et al. Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,2000,220(4):461-465.
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| APA |
Gao, F.,Huang, DD.,Li, JP.,Lin, YX.,Kong, MY.,...&Lin, LY.(2000).Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy.JOURNAL OF CRYSTAL GROWTH,220(4),461-465.
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| MLA |
Gao, F,et al."Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy".JOURNAL OF CRYSTAL GROWTH 220.4(2000):461-465.
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