Increasing the photoluminescence intensity of Ge islands by chemical etching

IMR OpenIR

	Increasing the photoluminescence intensity of Ge islands by chemical etching
	Gao, F ; Huang, CJ ; Huang, DD ; Li, JP ; Kong, MY ; Zeng, YP ; Li, JM ; Lin, LY
通讯作者	Gao, F()
	2001-10-01
发表期刊	CHINESE PHYSICS
ISSN	1009-1963
卷号	10 期号:10 页码:966-969
摘要	Self-assembled Ge islands were grown on Si(100) substrate by Si2H6-Ge molecular beam epitaxy. After being subjected to chemical etching, it is found that the photoluminescence from the etched Ge islands became more intense and shifted to the higher-energy side compared to that of the as-deposited Ge islands. This behaviour was explained by the effect of chemical etching on the morphology of the Ge islands. Our results demonstrate that chemical etching can be a way to change the luminescence property of the as-deposited islands.
关键词	Ge islands chemical etching photoluminescence Si2H6-Ge molecular beam epitaxy
收录类别	SCI
语种	英语
WOS研究方向	Physics
WOS类目	Physics, Multidisciplinary
WOS记录号	WOS:000171600300016
出版者	CHINESE PHYSICAL SOC
引用统计	被引频次：1[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/111665
专题	中国科学院金属研究所
通讯作者	Gao, F
作者单位	1.Shaanxi Normal Univ, Dept Phys, Xian 710062, Peoples R China 2.Acad Sinica, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China 3.Acad Sinica, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Gao, F,Huang, CJ,Huang, DD,et al. Increasing the photoluminescence intensity of Ge islands by chemical etching[J]. CHINESE PHYSICS,2001,10(10):966-969.
APA	Gao, F.,Huang, CJ.,Huang, DD.,Li, JP.,Kong, MY.,...&Lin, LY.(2001).Increasing the photoluminescence intensity of Ge islands by chemical etching.CHINESE PHYSICS,10(10),966-969.
MLA	Gao, F,et al."Increasing the photoluminescence intensity of Ge islands by chemical etching".CHINESE PHYSICS 10.10(2001):966-969.